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Phosphorus diffusion in float zone silicon crystal growth
Theis Leth Larsen
Research output
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Book/Report
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Ph.D. thesis
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Dive into the research topics of 'Phosphorus diffusion in float zone silicon crystal growth'. Together they form a unique fingerprint.
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Engineering
Phase Boundary
100%
Heat Transfer Model
100%
Free Surface
75%
Good Agreement
50%
Flow Field
50%
Dopants
50%
Dopant Concentration
50%
Defects
50%
Computer Simulation
25%
Centrifugal
25%
Convective
25%
Surface Model
25%
Unsteady Flow
25%
Axisymmetric
25%
Temperature Gradient
25%
Concentration Field
25%
Process Zone
25%
Temperature Field
25%
Growth Parameter
25%
Coupled Equation
25%
Global Temperature
25%
Hand Side
25%
Silicon Single Crystal
25%
Finite Element Modeling
25%
Natural Convection
25%
Boundary Layer
25%
Numerical Model
25%
Keyphrases
Float-zone Silicon
100%
Phosphorus Diffusion
100%
Silicon Crystal Growth
100%
Melt Convection
25%
Electromagnetic Force
25%
Concentration Boundary Layer
25%
High Growth
25%
Moving Boundary
25%
Heat Transfer Calculation
25%
Defect Transport
25%
Global Temperature
25%
Centrifugal Buoyancy
25%
Convective Cooling
25%
Gas-phase Doping
25%
Free Model
25%
Silicon Single Crystal
25%
Electromagnetic Surface
25%
Non-zero Right Hand Side
25%
Thermocapillary Force
25%
DLS Measurements
25%
Unsteady Flow Field
25%
Growth Parameters
25%
Coupled Electromagnetic
25%
Chemical Engineering
Thermal Gradient
100%
Natural Convection
100%
Temperature Distribution
100%
Material Science
Unsteady Flow
25%