Abstract
In the wide range of two-dimensional materials such as graphene and transition metal dichalcogenides, hexagonal boron nitride (hBN) provides a large band gap of around 6 eV. [1] This enables hBN to host defects with energy states deep inside in the electronic band gap, which are active at room temperature. Using state-of-the-art optical photoluminescence, we identified defects in multilayer hBN with multiple phonon side bands. We observed a zero phonon line at a photon energy of 2.14 eV and two pronounced phonon side bands at photon energies of 1.98 eV and 1.81 eV. [2] A model treating the electronic states in the defects as a two-level system coupled to longitudinal optical phonons, shows very good agreement with our experimental data. Further explorations of defects in hBN will pave the way to a better understanding of the coupling mechanism between phonons and defects in low-dimensional materials. These studies have been carried out within the Center of Nanostructured Graphene (CNG).
Original language | English |
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Publication date | 2018 |
Number of pages | 1 |
Publication status | Published - 2018 |
Event | Hybrid Approaches to Quantum-Information Processing: DNRF Center Conference - Royal Danish Academy of Sciences and Letters, Copenhagen, Denmark Duration: 18 Sept 2018 → 19 Sept 2018 https://dg.dk/konference-tilmelding/hybrid-approaches-to-quantum-information-processing/ |
Conference
Conference | Hybrid Approaches to Quantum-Information Processing |
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Location | Royal Danish Academy of Sciences and Letters |
Country/Territory | Denmark |
City | Copenhagen |
Period | 18/09/2018 → 19/09/2018 |
Internet address |