Phonon-electron coupling in luminescent defects in hexagonal boron nitride

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Abstract

In the wide range of two-dimensional materials such as graphene and transition metal dichalcogenides, hexagonal boron nitride (hBN) provides a large band gap of around 6 eV. [1] This enables hBN to host defects with energy states deep inside in the electronic band gap, which are active at room temperature. Using state-of-the-art optical photoluminescence, we identified defects in multilayer hBN with multiple phonon side bands. We observed a zero phonon line at a photon energy of 2.14 eV and two pronounced phonon side bands at photon energies of 1.98 eV and 1.81 eV. [2] A model treating the electronic states in the defects as a two-level system coupled to longitudinal optical phonons, shows very good agreement
with our experimental data. Further explorations of defects in hBN will pave the way to a better understanding of the coupling mechanism between phonons and defects in low-dimensional materials. These studies have been carried out within the Center of Nanostructured Graphene (CNG).
Original languageEnglish
Publication date2018
Number of pages1
Publication statusPublished - 2018
EventHybrid Approaches to Quantum-Information Processing: DNRF Center Conference - Royal Danish Academy of Sciences and Letters, Copenhagen, Denmark
Duration: 18 Sep 201819 Sep 2018
https://dg.dk/konference-tilmelding/hybrid-approaches-to-quantum-information-processing/

Conference

ConferenceHybrid Approaches to Quantum-Information Processing
LocationRoyal Danish Academy of Sciences and Letters
CountryDenmark
CityCopenhagen
Period18/09/201819/09/2018
Internet address

Cite this

Fischer, M., Geisler, M., Caridad, J., Iles-Smith, J., Kaasbjerg, K., Bøggild, P., ... Stenger, N. (2018). Phonon-electron coupling in luminescent defects in hexagonal boron nitride. Poster session presented at Hybrid Approaches to Quantum-Information Processing, Copenhagen, Denmark.
Fischer, Moritz ; Geisler, Mathias ; Caridad, Jose ; Iles-Smith, Jake ; Kaasbjerg, Kristen ; Bøggild, Peter ; Xiao, Sanshui ; Wubs, Martijn ; Stenger, Nicolas. / Phonon-electron coupling in luminescent defects in hexagonal boron nitride. Poster session presented at Hybrid Approaches to Quantum-Information Processing, Copenhagen, Denmark.1 p.
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title = "Phonon-electron coupling in luminescent defects in hexagonal boron nitride",
abstract = "In the wide range of two-dimensional materials such as graphene and transition metal dichalcogenides, hexagonal boron nitride (hBN) provides a large band gap of around 6 eV. [1] This enables hBN to host defects with energy states deep inside in the electronic band gap, which are active at room temperature. Using state-of-the-art optical photoluminescence, we identified defects in multilayer hBN with multiple phonon side bands. We observed a zero phonon line at a photon energy of 2.14 eV and two pronounced phonon side bands at photon energies of 1.98 eV and 1.81 eV. [2] A model treating the electronic states in the defects as a two-level system coupled to longitudinal optical phonons, shows very good agreementwith our experimental data. Further explorations of defects in hBN will pave the way to a better understanding of the coupling mechanism between phonons and defects in low-dimensional materials. These studies have been carried out within the Center of Nanostructured Graphene (CNG).",
author = "Moritz Fischer and Mathias Geisler and Jose Caridad and Jake Iles-Smith and Kristen Kaasbjerg and Peter B{\o}ggild and Sanshui Xiao and Martijn Wubs and Nicolas Stenger",
year = "2018",
language = "English",
note = "Hybrid Approaches to Quantum-Information Processing : DNRF Center Conference ; Conference date: 18-09-2018 Through 19-09-2018",
url = "https://dg.dk/konference-tilmelding/hybrid-approaches-to-quantum-information-processing/",

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Fischer, M, Geisler, M, Caridad, J, Iles-Smith, J, Kaasbjerg, K, Bøggild, P, Xiao, S, Wubs, M & Stenger, N 2018, 'Phonon-electron coupling in luminescent defects in hexagonal boron nitride' Hybrid Approaches to Quantum-Information Processing, Copenhagen, Denmark, 18/09/2018 - 19/09/2018, .

Phonon-electron coupling in luminescent defects in hexagonal boron nitride. / Fischer, Moritz; Geisler, Mathias; Caridad, Jose; Iles-Smith, Jake; Kaasbjerg, Kristen; Bøggild, Peter; Xiao, Sanshui ; Wubs, Martijn; Stenger, Nicolas.

2018. Poster session presented at Hybrid Approaches to Quantum-Information Processing, Copenhagen, Denmark.

Research output: Contribution to conferencePosterResearchpeer-review

TY - CONF

T1 - Phonon-electron coupling in luminescent defects in hexagonal boron nitride

AU - Fischer, Moritz

AU - Geisler, Mathias

AU - Caridad, Jose

AU - Iles-Smith, Jake

AU - Kaasbjerg, Kristen

AU - Bøggild, Peter

AU - Xiao, Sanshui

AU - Wubs, Martijn

AU - Stenger, Nicolas

PY - 2018

Y1 - 2018

N2 - In the wide range of two-dimensional materials such as graphene and transition metal dichalcogenides, hexagonal boron nitride (hBN) provides a large band gap of around 6 eV. [1] This enables hBN to host defects with energy states deep inside in the electronic band gap, which are active at room temperature. Using state-of-the-art optical photoluminescence, we identified defects in multilayer hBN with multiple phonon side bands. We observed a zero phonon line at a photon energy of 2.14 eV and two pronounced phonon side bands at photon energies of 1.98 eV and 1.81 eV. [2] A model treating the electronic states in the defects as a two-level system coupled to longitudinal optical phonons, shows very good agreementwith our experimental data. Further explorations of defects in hBN will pave the way to a better understanding of the coupling mechanism between phonons and defects in low-dimensional materials. These studies have been carried out within the Center of Nanostructured Graphene (CNG).

AB - In the wide range of two-dimensional materials such as graphene and transition metal dichalcogenides, hexagonal boron nitride (hBN) provides a large band gap of around 6 eV. [1] This enables hBN to host defects with energy states deep inside in the electronic band gap, which are active at room temperature. Using state-of-the-art optical photoluminescence, we identified defects in multilayer hBN with multiple phonon side bands. We observed a zero phonon line at a photon energy of 2.14 eV and two pronounced phonon side bands at photon energies of 1.98 eV and 1.81 eV. [2] A model treating the electronic states in the defects as a two-level system coupled to longitudinal optical phonons, shows very good agreementwith our experimental data. Further explorations of defects in hBN will pave the way to a better understanding of the coupling mechanism between phonons and defects in low-dimensional materials. These studies have been carried out within the Center of Nanostructured Graphene (CNG).

M3 - Poster

ER -

Fischer M, Geisler M, Caridad J, Iles-Smith J, Kaasbjerg K, Bøggild P et al. Phonon-electron coupling in luminescent defects in hexagonal boron nitride. 2018. Poster session presented at Hybrid Approaches to Quantum-Information Processing, Copenhagen, Denmark.