Abstract
with our experimental data. Further explorations of defects in hBN will pave the way to a better understanding of the coupling mechanism between phonons and defects in low-dimensional materials. These studies have been carried out within the Center of Nanostructured Graphene (CNG).
| Original language | English |
|---|---|
| Publication date | 2018 |
| Number of pages | 1 |
| Publication status | Published - 2018 |
| Event | Hybrid Approaches to Quantum-Information Processing: DNRF Center Conference - Royal Danish Academy of Sciences and Letters, Copenhagen, Denmark Duration: 18 Sep 2018 → 19 Sep 2018 https://dg.dk/konference-tilmelding/hybrid-approaches-to-quantum-information-processing/ |
Conference
| Conference | Hybrid Approaches to Quantum-Information Processing |
|---|---|
| Location | Royal Danish Academy of Sciences and Letters |
| Country | Denmark |
| City | Copenhagen |
| Period | 18/09/2018 → 19/09/2018 |
| Internet address |
Cite this
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Phonon-electron coupling in luminescent defects in hexagonal boron nitride. / Fischer, Moritz; Geisler, Mathias; Caridad, Jose; Iles-Smith, Jake; Kaasbjerg, Kristen; Bøggild, Peter; Xiao, Sanshui ; Wubs, Martijn; Stenger, Nicolas.
2018. Poster session presented at Hybrid Approaches to Quantum-Information Processing, Copenhagen, Denmark.Research output: Contribution to conference › Poster › Research › peer-review
TY - CONF
T1 - Phonon-electron coupling in luminescent defects in hexagonal boron nitride
AU - Fischer, Moritz
AU - Geisler, Mathias
AU - Caridad, Jose
AU - Iles-Smith, Jake
AU - Kaasbjerg, Kristen
AU - Bøggild, Peter
AU - Xiao, Sanshui
AU - Wubs, Martijn
AU - Stenger, Nicolas
PY - 2018
Y1 - 2018
N2 - In the wide range of two-dimensional materials such as graphene and transition metal dichalcogenides, hexagonal boron nitride (hBN) provides a large band gap of around 6 eV. [1] This enables hBN to host defects with energy states deep inside in the electronic band gap, which are active at room temperature. Using state-of-the-art optical photoluminescence, we identified defects in multilayer hBN with multiple phonon side bands. We observed a zero phonon line at a photon energy of 2.14 eV and two pronounced phonon side bands at photon energies of 1.98 eV and 1.81 eV. [2] A model treating the electronic states in the defects as a two-level system coupled to longitudinal optical phonons, shows very good agreementwith our experimental data. Further explorations of defects in hBN will pave the way to a better understanding of the coupling mechanism between phonons and defects in low-dimensional materials. These studies have been carried out within the Center of Nanostructured Graphene (CNG).
AB - In the wide range of two-dimensional materials such as graphene and transition metal dichalcogenides, hexagonal boron nitride (hBN) provides a large band gap of around 6 eV. [1] This enables hBN to host defects with energy states deep inside in the electronic band gap, which are active at room temperature. Using state-of-the-art optical photoluminescence, we identified defects in multilayer hBN with multiple phonon side bands. We observed a zero phonon line at a photon energy of 2.14 eV and two pronounced phonon side bands at photon energies of 1.98 eV and 1.81 eV. [2] A model treating the electronic states in the defects as a two-level system coupled to longitudinal optical phonons, shows very good agreementwith our experimental data. Further explorations of defects in hBN will pave the way to a better understanding of the coupling mechanism between phonons and defects in low-dimensional materials. These studies have been carried out within the Center of Nanostructured Graphene (CNG).
M3 - Poster
ER -