Phonon-electron coupling in luminescent defects in hexagonal boron nitride

Moritz Fischer, Mathias Geisler, Jose Caridad, Jake Iles-Smith, Kristen Kaasbjerg, Peter Bøggild, Sanshui Xiao, Martijn Wubs, Nicolas Stenger

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In the wide range of two-dimensional materials such as graphene and transition metal dichalcogenides, hexagonal boron nitride (hBN) provides a large band gap of around 6 eV. [1] This enables hBN to host defects with energy states deep inside in the electronic band gap, which are active at room temperature. Using state-of-the-art optical photoluminescence, we identified defects in multilayer hBN with multiple phonon side bands. We observed a zero phonon line at a photon energy of 2.14 eV and two pronounced phonon side bands at photon energies of 1.98 eV and 1.81 eV. [2] A model treating the electronic states in the defects as a two-level system coupled to longitudinal optical phonons, shows very good agreement
with our experimental data. Further explorations of defects in hBN will pave the way to a better understanding of the coupling mechanism between phonons and defects in low-dimensional materials. These studies have been carried out within the Center of Nanostructured Graphene (CNG).
Original languageEnglish
Publication date2018
Number of pages1
Publication statusPublished - 2018
EventHybrid Approaches to Quantum-Information Processing: DNRF Center Conference - Royal Danish Academy of Sciences and Letters, Copenhagen, Denmark
Duration: 18 Sep 201819 Sep 2018


ConferenceHybrid Approaches to Quantum-Information Processing
LocationRoyal Danish Academy of Sciences and Letters
Internet address

Cite this

Fischer, M., Geisler, M., Caridad, J., Iles-Smith, J., Kaasbjerg, K., Bøggild, P., Xiao, S., Wubs, M., & Stenger, N. (2018). Phonon-electron coupling in luminescent defects in hexagonal boron nitride. Poster session presented at Hybrid Approaches to Quantum-Information Processing, Copenhagen, Denmark.