Abstract
Accurate atomic coordinates of the room-temperature ( √3×√3) R30° and low-temperature ( 3×3) phases of 1/3 monolayer Sn on Ge(111) have been established by grazing-incidence x-ray diffraction with synchrotron radiation. The Sn atoms are located solely at T4 sites in the ( √3×√3) R30° structure. In the low-temperature phase one of the three Sn atoms per ( 3×3) unit cell is displaced outwards by 0.26±0.04Å relative to the other two. This displacement is accompanied by an increase in the first to second double-layer spacing in the Ge substrate.
| Original language | English |
|---|---|
| Journal | Physical Review Letters |
| Volume | 83 |
| Issue number | 11 |
| Pages (from-to) | 2226-2229 |
| ISSN | 0031-9007 |
| DOIs | |
| Publication status | Published - 1999 |