Phase transitions in two dimensions: The case of Sn adsorbed on Ge (111) surfaces

O. Bunk, J.H. Zeysing, G. Falkenberg, R.L. Johnson, Mourits Nielsen, Martin Meedom Nielsen, Robert Krarup Feidenhans'l

Research output: Contribution to journalJournal articleResearch

Abstract

Accurate atomic coordinates of the room-temperature ( √3×√3) R30° and low-temperature ( 3×3) phases of 1/3 monolayer Sn on Ge(111) have been established by grazing-incidence x-ray diffraction with synchrotron radiation. The Sn atoms are located solely at T4 sites in the ( √3×√3) R30° structure. In the low-temperature phase one of the three Sn atoms per ( 3×3) unit cell is displaced outwards by 0.26±0.04Å relative to the other two. This displacement is accompanied by an increase in the first to second double-layer spacing in the Ge substrate.

© 1999 The American Physical Society

Original languageEnglish
JournalPhysical Review Letters
Volume83
Issue number11
Pages (from-to)2226-2229
ISSN0031-9007
DOIs
Publication statusPublished - 1999

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