Phase transition of bismuth telluride thin films grown by MBE

Attila Fülöp; Yuxin Song; Sophie Charpentier; Peixiong Shi; Maria Ekström; Luca Galletti; Riccardo Arpaia; Thilo Bauch; Floriana Lombardi; Shumin Wang

Phase transition of bismuth telluride thin films grown by MBE

Attila Fülöp, Yuxin Song, Sophie Charpentier, Peixiong Shi, Maria Ekström, Luca Galletti, Riccardo Arpaia, Thilo Bauch, Floriana Lombardi, Shumin Wang

Chalmers University of Technology

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation of Bi4Te3 while Bi2Te3 is formed at higher ratios. Transport measurements reveal that Bi2Te3 has higher electron mobility than Bi4Te3.

Original language	English
Journal	Applied Physics Express
Volume	7
Issue number	4
Pages (from-to)	045503
Number of pages	1
ISSN	1882-0778
Publication status	Published - 2014

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title = "Phase transition of bismuth telluride thin films grown by MBE",

abstract = "A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation of Bi4Te3 while Bi2Te3 is formed at higher ratios. Transport measurements reveal that Bi2Te3 has higher electron mobility than Bi4Te3.",

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journal = "Applied Physics Express",

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TY - JOUR

T1 - Phase transition of bismuth telluride thin films grown by MBE

AU - Fülöp, Attila

AU - Song, Yuxin

AU - Charpentier, Sophie

AU - Shi, Peixiong

AU - Ekström, Maria

AU - Galletti, Luca

AU - Arpaia, Riccardo

AU - Bauch, Thilo

AU - Lombardi, Floriana

AU - Wang, Shumin

PY - 2014

Y1 - 2014

N2 - A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation of Bi4Te3 while Bi2Te3 is formed at higher ratios. Transport measurements reveal that Bi2Te3 has higher electron mobility than Bi4Te3.

AB - A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation of Bi4Te3 while Bi2Te3 is formed at higher ratios. Transport measurements reveal that Bi2Te3 has higher electron mobility than Bi4Te3.

M3 - Journal article

SN - 1882-0778

VL - 7

SP - 045503

JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

ER -

Phase transition of bismuth telluride thin films grown by MBE

Abstract

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