Phase and spin-orbit relaxation measured by weak localization in GaAS/AlGaAs heterostructures with two subbands populated

J. E. Hansen, Rafael J. Taboryski, Poul Erik Lindelof

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

Using a back gate technique we have studied weak localization magnetoresistance in a GaAs/AlGaAs heterostructure with one or two subbands of two dimensional electron gas systems (2DEG). The spin-orbit antilocalization for a single 2DEG cannot be influenced by a magnetic field and only the component perpendicular to the 2DEG can be determined as a constant addendum to the phase relaxation rate. When 2 subbands become populated at high electron concentrations, the phase relaxation rate is enhanced and the spin-orbit relaxation in the plane of the 2DEG can be detected because of the quasi-2-dimensional situation.
Original languageEnglish
JournalPhysica B: Condensed Matter
Volume194
Pages (from-to)1129-1130
ISSN0921-4526
DOIs
Publication statusPublished - 1994
Externally publishedYes
Event20th International Conference on Low Temperature Physics - Eugne, OR, United States
Duration: 4 Aug 199311 Aug 1993
Conference number: 20

Conference

Conference20th International Conference on Low Temperature Physics
Number20
CountryUnited States
CityEugne, OR
Period04/08/199311/08/1993

Fingerprint Dive into the research topics of 'Phase and spin-orbit relaxation measured by weak localization in GaAS/AlGaAs heterostructures with two subbands populated'. Together they form a unique fingerprint.

Cite this