Phase and spin-orbit relaxation measured by weak localization in GaAS/AlGaAs heterostructures with two subbands populated

J. E. Hansen; Rafael J. Taboryski; Poul Erik Lindelof

doi:10.1016/0921-4526(94)90894-X

Phase and spin-orbit relaxation measured by weak localization in GaAS/AlGaAs heterostructures with two subbands populated

J. E. Hansen, Rafael J. Taboryski, Poul Erik Lindelof

University of Copenhagen

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

Using a back gate technique we have studied weak localization magnetoresistance in a GaAs/AlGaAs heterostructure with one or two subbands of two dimensional electron gas systems (2DEG). The spin-orbit antilocalization for a single 2DEG cannot be influenced by a magnetic field and only the component perpendicular to the 2DEG can be determined as a constant addendum to the phase relaxation rate. When 2 subbands become populated at high electron concentrations, the phase relaxation rate is enhanced and the spin-orbit relaxation in the plane of the 2DEG can be detected because of the quasi-2-dimensional situation.

Original language	English
Journal	Physica B: Condensed Matter
Volume	194
Pages (from-to)	1129-1130
ISSN	0921-4526
DOIs	https://doi.org/10.1016/0921-4526(94)90894-X
Publication status	Published - 1994
Externally published	Yes
Event	20th International Conference on Low Temperature Physics - Eugne, OR, United States Duration: 4 Aug 1993 → 11 Aug 1993 Conference number: 20

Conference

Conference	20th International Conference on Low Temperature Physics
Number	20
Country/Territory	United States
City	Eugne, OR
Period	04/08/1993 → 11/08/1993

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@inproceedings{51d854e9da4e47ddb2cd69620de2c35d,

title = "Phase and spin-orbit relaxation measured by weak localization in GaAS/AlGaAs heterostructures with two subbands populated",

abstract = "Using a back gate technique we have studied weak localization magnetoresistance in a GaAs/AlGaAs heterostructure with one or two subbands of two dimensional electron gas systems (2DEG). The spin-orbit antilocalization for a single 2DEG cannot be influenced by a magnetic field and only the component perpendicular to the 2DEG can be determined as a constant addendum to the phase relaxation rate. When 2 subbands become populated at high electron concentrations, the phase relaxation rate is enhanced and the spin-orbit relaxation in the plane of the 2DEG can be detected because of the quasi-2-dimensional situation.",

author = "Hansen, {J. E.} and Taboryski, {Rafael J.} and Lindelof, {Poul Erik}",

year = "1994",

doi = "10.1016/0921-4526(94)90894-X",

language = "English",

volume = "194",

pages = "1129--1130",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

note = "20th International Conference on Low Temperature Physics ; Conference date: 04-08-1993 Through 11-08-1993",

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TY - GEN

T1 - Phase and spin-orbit relaxation measured by weak localization in GaAS/AlGaAs heterostructures with two subbands populated

AU - Hansen, J. E.

AU - Taboryski, Rafael J.

AU - Lindelof, Poul Erik

N1 - Conference code: 20

PY - 1994

Y1 - 1994

N2 - Using a back gate technique we have studied weak localization magnetoresistance in a GaAs/AlGaAs heterostructure with one or two subbands of two dimensional electron gas systems (2DEG). The spin-orbit antilocalization for a single 2DEG cannot be influenced by a magnetic field and only the component perpendicular to the 2DEG can be determined as a constant addendum to the phase relaxation rate. When 2 subbands become populated at high electron concentrations, the phase relaxation rate is enhanced and the spin-orbit relaxation in the plane of the 2DEG can be detected because of the quasi-2-dimensional situation.

AB - Using a back gate technique we have studied weak localization magnetoresistance in a GaAs/AlGaAs heterostructure with one or two subbands of two dimensional electron gas systems (2DEG). The spin-orbit antilocalization for a single 2DEG cannot be influenced by a magnetic field and only the component perpendicular to the 2DEG can be determined as a constant addendum to the phase relaxation rate. When 2 subbands become populated at high electron concentrations, the phase relaxation rate is enhanced and the spin-orbit relaxation in the plane of the 2DEG can be detected because of the quasi-2-dimensional situation.

U2 - 10.1016/0921-4526(94)90894-X

DO - 10.1016/0921-4526(94)90894-X

M3 - Conference article

SN - 0921-4526

VL - 194

SP - 1129

EP - 1130

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - 20th International Conference on Low Temperature Physics

Y2 - 4 August 1993 through 11 August 1993

ER -

Phase and spin-orbit relaxation measured by weak localization in GaAS/AlGaAs heterostructures with two subbands populated

Abstract

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