Using a back gate technique we have studied weak localization magnetoresistance in a GaAs/AlGaAs heterostructure with one or two subbands of two dimensional electron gas systems (2DEG). The spin-orbit antilocalization for a single 2DEG cannot be influenced by a magnetic field and only the component perpendicular to the 2DEG can be determined as a constant addendum to the phase relaxation rate. When 2 subbands become populated at high electron concentrations, the phase relaxation rate is enhanced and the spin-orbit relaxation in the plane of the 2DEG can be detected because of the quasi-2-dimensional situation.
|Journal||Physica B: Condensed Matter|
|Publication status||Published - 1994|
|Event||20th International Conference on Low Temperature Physics - Eugne, OR, United States|
Duration: 4 Aug 1993 → 11 Aug 1993
Conference number: 20
|Conference||20th International Conference on Low Temperature Physics|
|Period||04/08/1993 → 11/08/1993|