Performance analysis of resistive switching devices based on BaTiO3 thin films

Natasa Samardzic, Tijana Kojic, Jelena Vukmirovic, Dordije Tripkovic, Branimir Bajac, Vladimir Srdic, Goran Stojanovic

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Abstract

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.
Original languageEnglish
Article number012046
JournalI O P Conference Series: Materials Science and Engineering
Volume108
Number of pages4
ISSN1757-8981
DOIs
Publication statusPublished - 2016
Externally publishedYes
Event5th International Conference on Materials and Applications for Sensors and Transducers (IC-MAST2015) - Mykonos Island, Greece
Duration: 27 Sep 201530 Sep 2015
Conference number: 5

Conference

Conference5th International Conference on Materials and Applications for Sensors and Transducers (IC-MAST2015)
Number5
CountryGreece
CityMykonos Island
Period27/09/201530/09/2015

Cite this

Samardzic, N., Kojic, T., Vukmirovic, J., Tripkovic, D., Bajac, B., Srdic, V., & Stojanovic, G. (2016). Performance analysis of resistive switching devices based on BaTiO3 thin films. I O P Conference Series: Materials Science and Engineering, 108, [012046]. https://doi.org/10.1088/1757-899X/108/1/012046