PECVD grown multiple core planar waveguides with extremely low                interface reflections and losses

Christian Laurent-Lund; Mogens Rysholt Poulsen; Martijn A Beukema; Jens Engholm Pedersen

doi:10.1109/68.720284

PECVD grown multiple core planar waveguides with extremely low interface reflections and losses

Christian Laurent-Lund, Mogens Rysholt Poulsen, Martijn A Beukema, Jens Engholm Pedersen

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

A novel and generic method for fabricating silica-on-silicon planar lightwave circuits with cores composed of two or more different types of glasses is described. The basic process technologies used are silane/germane/nitrous-oxide based plasma enhanced chemical vapor deposition and fluorine based reactive ion etching. Very high-quality interfaces between the different core glasses are obtained with interface losses as low as 0.022 +/- 0.012 dB and reflection levels below -80 dB. This technique adds flexibility and ease to the design of complex silica planar waveguide components, allowing, e.g., independent optimization of amplifying and passive sections in lossless devices based on erbium-doped planar waveguides.

Original language	English
Journal	I E E E Photonics Technology Letters
Volume	10
Issue number	10
Pages (from-to)	1431-1433
ISSN	1041-1135
DOIs	https://doi.org/10.1109/68.720284
Publication status	Published - 1998

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title = "PECVD grown multiple core planar waveguides with extremely low interface reflections and losses",

abstract = "A novel and generic method for fabricating silica-on-silicon planar lightwave circuits with cores composed of two or more different types of glasses is described. The basic process technologies used are silane/germane/nitrous-oxide based plasma enhanced chemical vapor deposition and fluorine based reactive ion etching. Very high-quality interfaces between the different core glasses are obtained with interface losses as low as 0.022 +/- 0.012 dB and reflection levels below -80 dB. This technique adds flexibility and ease to the design of complex silica planar waveguide components, allowing, e.g., independent optimization of amplifying and passive sections in lossless devices based on erbium-doped planar waveguides. ",

author = "Christian Laurent-Lund and Poulsen, {Mogens Rysholt} and Beukema, {Martijn A} and Pedersen, {Jens Engholm}",

year = "1998",

doi = "10.1109/68.720284",

language = "English",

volume = "10",

pages = "1431--1433",

journal = "I E E E Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers",

number = "10",

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T1 - PECVD grown multiple core planar waveguides with extremely low interface reflections and losses

AU - Laurent-Lund, Christian

AU - Poulsen, Mogens Rysholt

AU - Beukema, Martijn A

AU - Pedersen, Jens Engholm

PY - 1998

Y1 - 1998

N2 - A novel and generic method for fabricating silica-on-silicon planar lightwave circuits with cores composed of two or more different types of glasses is described. The basic process technologies used are silane/germane/nitrous-oxide based plasma enhanced chemical vapor deposition and fluorine based reactive ion etching. Very high-quality interfaces between the different core glasses are obtained with interface losses as low as 0.022 +/- 0.012 dB and reflection levels below -80 dB. This technique adds flexibility and ease to the design of complex silica planar waveguide components, allowing, e.g., independent optimization of amplifying and passive sections in lossless devices based on erbium-doped planar waveguides.

AB - A novel and generic method for fabricating silica-on-silicon planar lightwave circuits with cores composed of two or more different types of glasses is described. The basic process technologies used are silane/germane/nitrous-oxide based plasma enhanced chemical vapor deposition and fluorine based reactive ion etching. Very high-quality interfaces between the different core glasses are obtained with interface losses as low as 0.022 +/- 0.012 dB and reflection levels below -80 dB. This technique adds flexibility and ease to the design of complex silica planar waveguide components, allowing, e.g., independent optimization of amplifying and passive sections in lossless devices based on erbium-doped planar waveguides.

U2 - 10.1109/68.720284

DO - 10.1109/68.720284

M3 - Journal article

SN - 1041-1135

VL - 10

SP - 1431

EP - 1433

JO - I E E E Photonics Technology Letters

JF - I E E E Photonics Technology Letters

IS - 10

ER -

PECVD grown multiple core planar waveguides with extremely low interface reflections and losses

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