Patterning of high mobility electron gases at complex oxide interfaces

Felix Trier; G. E. D. K.  Prawiroatmodjo; Merlin von Soosten; Dennis Valbjørn Christensen; T. S. Jespersen; Yunzhong Chen; Nini Pryds

doi:10.1063/1.4935553

Patterning of high mobility electron gases at complex oxide interfaces

Felix Trier, G. E. D. K. Prawiroatmodjo, Merlin von Soosten, Dennis Valbjørn Christensen, T. S. Jespersen, Yunzhong Chen, Nini Pryds

Department of Energy Conversion and Storage

University of Copenhagen

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO₃/SrTiO₃ (a-LAO/STO) and modulation-doped amorphous-LaAlO₃/La_7/8Sr_1/8MnO₃/SrTiO₃ (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm²/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually are ∼1 000 cm²/V s at 2K. © 2015 AIP Publishing LLC.

Original language	English
Article number	191604
Journal	Applied Physics Letters
Volume	107
Number of pages	4
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.4935553
Publication status	Published - 2015

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Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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title = "Patterning of high mobility electron gases at complex oxide interfaces",

abstract = "Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually are ∼1 000 cm2/V s at 2K. {\textcopyright} 2015 AIP Publishing LLC.",

author = "Felix Trier and Prawiroatmodjo, {G. E. D. K.} and {von Soosten}, Merlin and Christensen, {Dennis Valbj{\o}rn} and Jespersen, {T. S.} and Yunzhong Chen and Nini Pryds",

note = "Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "2015",

doi = "10.1063/1.4935553",

language = "English",

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T1 - Patterning of high mobility electron gases at complex oxide interfaces

AU - Trier, Felix

AU - Prawiroatmodjo, G. E. D. K.

AU - von Soosten, Merlin

AU - Christensen, Dennis Valbjørn

AU - Jespersen, T. S.

AU - Chen, Yunzhong

AU - Pryds, Nini

N1 - Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2015

Y1 - 2015

N2 - Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually are ∼1 000 cm2/V s at 2K. © 2015 AIP Publishing LLC.

AB - Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually are ∼1 000 cm2/V s at 2K. © 2015 AIP Publishing LLC.

U2 - 10.1063/1.4935553

DO - 10.1063/1.4935553

M3 - Journal article

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 191604

ER -

Patterning of high mobility electron gases at complex oxide interfaces

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