Passivation of surface-nanostructured f-SiC and porous SiC

Haiyan Ou (Invited author), Weifang Lu (Invited author), Yiyu Ou (Invited author), Valdas Jokubavicius (Invited author), Mikael Syväjärvi (Invited author), Philipp Schuh (Invited author), Peter Wellmann (Invited author), Yoshimi Iwasa (Invited author)

Research output: Contribution to conferencePaperResearchpeer-review

Abstract

The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.
Original languageEnglish
Publication date2016
Number of pages1
Publication statusPublished - 2016
Event4th International workshop on LEDs and solar applications - Meijo University, Nagoya, Japan
Duration: 30 Mar 201631 Mar 2016

Conference

Conference4th International workshop on LEDs and solar applications
LocationMeijo University
CountryJapan
CityNagoya
Period30/03/201631/03/2016

Bibliographical note

Invited talk at '4th International workshop on LEDs and solar applications', held at Meijo University, Nagoya, Japan, Mar.30-31, 2016

Cite this

Ou, H., Lu, W., Ou, Y., Jokubavicius, V., Syväjärvi, M., Schuh, P., Wellmann, P., & Iwasa, Y. (2016). Passivation of surface-nanostructured f-SiC and porous SiC. Paper presented at 4th International workshop on LEDs and solar applications, Nagoya, Japan.