Passivation of a Metal Contact with a Tunneling Layer

X. Loozen, J.B. Larsen, F. Dross, M. Aleman, T. Bearda, B.J. O'Sullivan, I. Gordon, J. Poortmans, Jaap Hoornstra, Gunnar Schubert Guy Beaucarne

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    The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5nm, a 1.5nm AlOx layer is found to be a candidate of choice for contact passivation.
    Original languageEnglish
    JournalEnergy Procedia
    Pages (from-to)75-83
    Publication statusPublished - 2011
    Event3rd Workshop on Metallization for Crystalline Silicon Solar Cells - Charleroi, Belgium
    Duration: 25 Oct 201126 Oct 2011


    Conference3rd Workshop on Metallization for Crystalline Silicon Solar Cells


    • Silicon solar cells
    • Contact passivation
    • Tunneling layer
    • Aluminum oxide
    • MIS contact
    • PERC


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