Passivation of a Metal Contact with a Tunneling Layer

X. Loozen; J.B. Larsen; F. Dross; M. Aleman; T. Bearda; B.J. O'Sullivan; I. Gordon; J. Poortmans; Jaap Hoornstra, Gunnar Schubert Guy Beaucarne

doi:10.1016/j.egypro.2012.05.010

Passivation of a Metal Contact with a Tunneling Layer

X. Loozen, J.B. Larsen, F. Dross, M. Aleman, T. Bearda, B.J. O'Sullivan, I. Gordon, J. Poortmans, Jaap Hoornstra, Gunnar Schubert Guy Beaucarne

Interuniversitair Micro-Elektronica Centrum

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Abstract

The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5nm, a 1.5nm AlOx layer is found to be a candidate of choice for contact passivation.

Original language	English
Journal	Energy Procedia
Volume	21
Pages (from-to)	75-83
ISSN	1876-6102
DOIs	https://doi.org/10.1016/j.egypro.2012.05.010
Publication status	Published - 2011
Event	3rd Workshop on Metallization for Crystalline Silicon Solar Cells - Charleroi, Belgium Duration: 25 Oct 2011 → 26 Oct 2011

Conference

Conference	3rd Workshop on Metallization for Crystalline Silicon Solar Cells
Country/Territory	Belgium
City	Charleroi
Period	25/10/2011 → 26/10/2011

Keywords

Silicon solar cells
Contact passivation
Tunneling layer
Aluminum oxide
MIS contact
PERC

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title = "Passivation of a Metal Contact with a Tunneling Layer",

abstract = "The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5nm, a 1.5nm AlOx layer is found to be a candidate of choice for contact passivation.",

keywords = "Silicon solar cells, Contact passivation, Tunneling layer, Aluminum oxide, MIS contact, PERC",

author = "X. Loozen and J.B. Larsen and F. Dross and M. Aleman and T. Bearda and B.J. O'Sullivan and I. Gordon and J. Poortmans and {Guy Beaucarne}, {Jaap Hoornstra, Gunnar Schubert}",

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doi = "10.1016/j.egypro.2012.05.010",

language = "English",

volume = "21",

pages = "75--83",

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AU - Loozen, X.

AU - Larsen, J.B.

AU - Dross, F.

AU - Aleman, M.

AU - Bearda, T.

AU - O'Sullivan, B.J.

AU - Gordon, I.

AU - Poortmans, J.

AU - Guy Beaucarne, Jaap Hoornstra, Gunnar Schubert

PY - 2011

Y1 - 2011

N2 - The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5nm, a 1.5nm AlOx layer is found to be a candidate of choice for contact passivation.

AB - The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5nm, a 1.5nm AlOx layer is found to be a candidate of choice for contact passivation.

KW - Silicon solar cells

KW - Contact passivation

KW - Tunneling layer

KW - Aluminum oxide

KW - MIS contact

KW - PERC

U2 - 10.1016/j.egypro.2012.05.010

DO - 10.1016/j.egypro.2012.05.010

M3 - Conference article

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JO - Energy Procedia

JF - Energy Procedia

T2 - 3rd Workshop on Metallization for Crystalline Silicon Solar Cells

Y2 - 25 October 2011 through 26 October 2011

ER -

Passivation of a Metal Contact with a Tunneling Layer

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Conference

Keywords

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