Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures

D. Jacobsson; Johan Mikael Persson; D. Kriegner; T. Etzelstorfer; J. Wallentin; Jakob Birkedal Wagner; J. Stangl; L. Samuelson; K. Deppert; M. T. Borgström

doi:10.1088/0957-4484/23/24/245601

Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures

D. Jacobsson, Johan Mikael Persson, D. Kriegner, T. Etzelstorfer, J. Wallentin, Jakob Birkedal Wagner, J. Stangl, L. Samuelson, K. Deppert, M. T. Borgström

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.

Original language	English
Journal	Nanotechnology
Volume	23
Issue number	24
Pages (from-to)	245601
ISSN	0957-4484
DOIs	https://doi.org/10.1088/0957-4484/23/24/245601
Publication status	Published - 2012

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10.1088/0957-4484/23/24/245601

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title = "Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures",

abstract = "Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.",

author = "D. Jacobsson and Persson, {Johan Mikael} and D. Kriegner and T. Etzelstorfer and J. Wallentin and Wagner, {Jakob Birkedal} and J. Stangl and L. Samuelson and K. Deppert and Borgstr{\"o}m, {M. T.}",

year = "2012",

doi = "10.1088/0957-4484/23/24/245601",

language = "English",

volume = "23",

pages = "245601",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing",

number = "24",

}

Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures. / Jacobsson, D.; Persson, Johan Mikael; Kriegner, D.; Etzelstorfer, T.; Wallentin, J.; Wagner, Jakob Birkedal; Stangl, J.; Samuelson, L.; Deppert, K.; Borgström, M. T.

In: Nanotechnology, Vol. 23, No. 24, 2012, p. 245601.

Research output: Contribution to journal › Journal article › Research › peer-review

TY - JOUR

T1 - Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures

AU - Jacobsson, D.

AU - Persson, Johan Mikael

AU - Kriegner, D.

AU - Etzelstorfer, T.

AU - Wallentin, J.

AU - Wagner, Jakob Birkedal

AU - Stangl, J.

AU - Samuelson, L.

AU - Deppert, K.

AU - Borgström, M. T.

PY - 2012

Y1 - 2012

N2 - Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.

AB - Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.

U2 - 10.1088/0957-4484/23/24/245601

DO - 10.1088/0957-4484/23/24/245601

M3 - Journal article

C2 - 22641029

VL - 23

SP - 245601

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 24

ER -

Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures

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Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures