P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

Arnaud le  Febvrier; Ngo Van Nong; Gregory  Abadias; Per Eklund

doi:10.7567/APEX.11.051003

P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

Arnaud le Febvrier^*, Ngo Van Nong, Gregory Abadias, Per Eklund

^*Corresponding author for this work

Department of Energy Conversion and Storage

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Abstract

Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN_1+δ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr_0.96Al_0.04N_1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.

Original language	English
Article number	051003
Journal	Applied Physics Express
Volume	11
Issue number	5
Number of pages	4
ISSN	1882-0778
DOIs	https://doi.org/10.7567/APEX.11.051003
Publication status	Published - 2018

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title = "P-type Al-doped Cr-deficient CrN thin films for thermoelectrics",

abstract = "Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN1+δ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr0.96Al0.04N1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.",

author = "Febvrier, {Arnaud le} and {Van Nong}, Ngo and Gregory Abadias and Per Eklund",

year = "2018",

doi = "10.7567/APEX.11.051003",

language = "English",

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issn = "1882-0778",

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T1 - P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

AU - Febvrier, Arnaud le

AU - Van Nong, Ngo

AU - Abadias, Gregory

AU - Eklund, Per

PY - 2018

Y1 - 2018

N2 - Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN1+δ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr0.96Al0.04N1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.

AB - Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN1+δ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr0.96Al0.04N1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.

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DO - 10.7567/APEX.11.051003

M3 - Journal article

SN - 1882-0778

VL - 11

JO - Applied Physics Express

JF - Applied Physics Express

IS - 5

M1 - 051003

ER -

P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

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