Abstract
Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium hydroxide. Numerical simulations of the electromagnetic field around the probe-sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. (C) 1997 American Institute of Physics.
Original language | English |
---|---|
Journal | Journal of Applied Physics |
Volume | 82 |
Issue number | 1 |
Pages (from-to) | 49-53 |
ISSN | 0021-8979 |
DOIs | |
Publication status | Published - 1997 |
Bibliographical note
Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Keywords
- TUNNELING MICROSCOPE
- MODEL
- FABRICATION
- FORCE MICROSCOPE