Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

Steen Madsen; Sergey I. Bozhevolnyi; Karen Birkelund; Matthias Müllenborn; Jørn Märcher Hvam; Francois Grey

doi:10.1063/1.365847

Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

Steen Madsen, Sergey I. Bozhevolnyi, Karen Birkelund, Matthias Müllenborn, Jørn Märcher Hvam, Francois Grey

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Abstract

Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium hydroxide. Numerical simulations of the electromagnetic field around the probe-sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. (C) 1997 American Institute of Physics.

Original language	English
Journal	Journal of Applied Physics
Volume	82
Issue number	1
Pages (from-to)	49-53
ISSN	0021-8979
DOIs	https://doi.org/10.1063/1.365847
Publication status	Published - 1997

Bibliographical note

Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

TUNNELING MICROSCOPE
MODEL
FABRICATION
FORCE MICROSCOPE

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title = "Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes",

abstract = "Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium hydroxide. Numerical simulations of the electromagnetic field around the probe-sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. (C) 1997 American Institute of Physics.",

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note = "Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "1997",

doi = "10.1063/1.365847",

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AU - Madsen, Steen

AU - Bozhevolnyi, Sergey I.

AU - Birkelund, Karen

AU - Müllenborn, Matthias

AU - Hvam, Jørn Märcher

AU - Grey, Francois

N1 - Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 1997

Y1 - 1997

N2 - Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium hydroxide. Numerical simulations of the electromagnetic field around the probe-sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. (C) 1997 American Institute of Physics.

AB - Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium hydroxide. Numerical simulations of the electromagnetic field around the probe-sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. (C) 1997 American Institute of Physics.

KW - TUNNELING MICROSCOPE

KW - MODEL

KW - FABRICATION

KW - FORCE MICROSCOPE

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DO - 10.1063/1.365847

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SN - 0021-8979

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Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

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