Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

Steen Madsen, Sergey I. Bozhevolnyi, Karen Birkelund, Matthias Müllenborn, Jørn Märcher Hvam, Francois Grey

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    Abstract

    Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium hydroxide. Numerical simulations of the electromagnetic field around the probe-sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. (C) 1997 American Institute of Physics.
    Original languageEnglish
    JournalJournal of Applied Physics
    Volume82
    Issue number1
    Pages (from-to)49-53
    ISSN0021-8979
    DOIs
    Publication statusPublished - 1997

    Bibliographical note

    Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • TUNNELING MICROSCOPE
    • MODEL
    • FABRICATION
    • FORCE MICROSCOPE

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