Oxidation of clean silicon surfaces studied by four-point probe surface conductance measurements

Christian Leth Petersen, Francois Grey, M. Aono

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    We have investigated how the conductance of Si(100)-(2 x 1) and Si(111)-(7 x 7) surfaces change during exposure to molecular oxygen. A monotonic decrease in conductance is seen as the (100) surfaces oxidizes. In contract to a prior study, we propose that this change is caused by a decrease in surface mobility due to surface roughening. The oxidation of the (111) surfaces induces a more complex conductance variation. This can be explained by changes in the band bending which occur during the reaction. Our results show a two-stage reaction, the first stage being completed after one monolayer of oxygen has been absorbed.
    Original languageEnglish
    JournalSurface Science
    Volume377-379
    Issue number1-3
    Pages (from-to)676-680
    ISSN0039-6028
    DOIs
    Publication statusPublished - 1997

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