Abstract
Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied.
The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the
doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compared. The
carrier concentration profile is measured using electrochemical capacitance-voltage (ECV) profilometry
and the total concentration of silicon atoms is measured by secondary ion mass spectroscopy (SIMS) in
order to evaluate the amount of Si atoms contributing as donors. The electron concentration about
4×1019cm-3 is achieved.
Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR)
spectroscopy and are fitted by a Drude-Lorentz function.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of EWMOVPE XVI |
| Number of pages | 4 |
| Publication date | 2015 |
| Publication status | Published - 2015 |
| Event | 16th European Workshop on Metalorganic Vapour Phase Epitaxy - Lund, Sweden Duration: 7 Jun 2015 → 10 Jun 2015 Conference number: 16 |
Conference
| Conference | 16th European Workshop on Metalorganic Vapour Phase Epitaxy |
|---|---|
| Number | 16 |
| Country/Territory | Sweden |
| City | Lund |
| Period | 07/06/2015 → 10/06/2015 |
Keywords
- Epitaxy
- Doping
- InP
- Plasmonics
- FTIR