Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications

Mohammad Esmail Aryaee Panah, Sanshui Xiao, Andrei Lavrinenko, Elizaveta Semenova

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Abstract

Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compared. The carrier concentration profile is measured using electrochemical capacitance-voltage (ECV) profilometry and the total concentration of silicon atoms is measured by secondary ion mass spectroscopy (SIMS) in order to evaluate the amount of Si atoms contributing as donors. The electron concentration about 4×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function.
Original languageEnglish
Title of host publicationProceedings of EWMOVPE XVI
Number of pages4
Publication date2015
Publication statusPublished - 2015
Event16th European Workshop on Metalorganic Vapour Phase Epitaxy - Lund, Sweden
Duration: 7 Jun 201510 Jun 2015

Conference

Conference16th European Workshop on Metalorganic Vapour Phase Epitaxy
CountrySweden
CityLund
Period07/06/201510/06/2015

Keywords

  • Epitaxy
  • Doping
  • InP
  • Plasmonics
  • FTIR

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