Abstract
X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction.
Original language | English |
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Journal | Physical Review Letters |
Volume | 57 |
Issue number | 21 |
Pages (from-to) | 2714-2717 |
ISSN | 0031-9007 |
DOIs | |
Publication status | Published - 1986 |