Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

I. K. Robinson, W. K. Waskiewicz, R. T. Tung, Jakob Bohr

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction.
    Original languageEnglish
    JournalPhysical Review Letters
    Volume57
    Issue number21
    Pages (from-to)2714-2717
    ISSN0031-9007
    DOIs
    Publication statusPublished - 1986

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