Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells

Faiz Ahmad; Akhlesh Lakhtakia; Peter B. Monk

doi:10.1364/ao.381246

Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells

Faiz Ahmad^*, Akhlesh Lakhtakia, Peter B. Monk

^*Corresponding author for this work

Pennsylvania State University

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Abstract

An optoelectronic optimization was carried out for an Al_ξGa₁−_ξAs (AlGaAs) solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd–Ge–Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap is predicted to enhance the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts, can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.

Original language	English
Journal	Applied Optics
Volume	59
Issue number	4
Pages (from-to)	1018-1027
ISSN	1559-128X
DOIs	https://doi.org/10.1364/ao.381246
Publication status	Published - 2020

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title = "Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells",

abstract = "An optoelectronic optimization was carried out for an AlξGa1−ξAs (AlGaAs) solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd–Ge–Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap is predicted to enhance the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts, can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.",

author = "Faiz Ahmad and Akhlesh Lakhtakia and Monk, {Peter B.}",

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doi = "10.1364/ao.381246",

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T1 - Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells

AU - Ahmad, Faiz

AU - Lakhtakia, Akhlesh

AU - Monk, Peter B.

PY - 2020

Y1 - 2020

N2 - An optoelectronic optimization was carried out for an AlξGa1−ξAs (AlGaAs) solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd–Ge–Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap is predicted to enhance the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts, can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.

AB - An optoelectronic optimization was carried out for an AlξGa1−ξAs (AlGaAs) solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd–Ge–Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap is predicted to enhance the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts, can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.

U2 - 10.1364/ao.381246

DO - 10.1364/ao.381246

M3 - Journal article

SN - 1559-128X

VL - 59

SP - 1018

EP - 1027

JO - Applied Optics

JF - Applied Optics

IS - 4

ER -

Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells

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