Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells

Faiz Ahmad*, Akhlesh Lakhtakia, Peter B. Monk

*Corresponding author for this work

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    Abstract

    An optoelectronic optimization was carried out for an AlξGa1ξAs (AlGaAs) solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd–Ge–Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap is predicted to enhance the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts, can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.
    Original languageEnglish
    JournalApplied Optics
    Volume59
    Issue number4
    Pages (from-to)1018-1027
    ISSN1559-128X
    DOIs
    Publication statusPublished - 2020

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