Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

Maryam Shayesteh, Dan O' Connell, Farzan Gity, Philip Murphy-Armando, Ran Yu, Karim Huet, Ines Toqué-Tresonne, Fuccio Cristiano, Simona Boninelli, Henrik Hartmann Henrichsen, Peter Folmer Nielsen, Dirch Hjorth Petersen, Ray Duffy

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier concentration above 1020 cm −3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode I on/I off ratio ∼ 105 and ideality factor (n) ∼ 1.2, as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.
    Original languageEnglish
    JournalI E E E Transactions on Electron Devices
    Volume61
    Issue number12
    Pages (from-to)4047-4055
    ISSN0018-9383
    DOIs
    Publication statusPublished - 2014

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