In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier concentration above 1020 cm −3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode I on/I off ratio ∼ 105 and ideality factor (n) ∼ 1.2, as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.