Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

Maryam Shayesteh; Dan O' Connell; Farzan Gity; Philip Murphy-Armando; Ran Yu; Karim Huet; Ines Toqué-Tresonne; Fuccio Cristiano; Simona Boninelli; Henrik Hartmann Henrichsen; Peter Folmer Nielsen; Dirch Hjorth Petersen; Ray Duffy

doi:10.1109/TED.2014.2364957

Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

Maryam Shayesteh, Dan O' Connell, Farzan Gity, Philip Murphy-Armando, Ran Yu, Karim Huet, Ines Toqué-Tresonne, Fuccio Cristiano, Simona Boninelli, Henrik Hartmann Henrichsen, Peter Folmer Nielsen, Dirch Hjorth Petersen, Ray Duffy

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier concentration above 1020 cm −3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode I on/I off ratio ∼ 105 and ideality factor (n) ∼ 1.2, as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.

Original language	English
Journal	I E E E Transactions on Electron Devices
Volume	61
Issue number	12
Pages (from-to)	4047-4055
ISSN	0018-9383
DOIs	https://doi.org/10.1109/TED.2014.2364957
Publication status	Published - 2014

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Shayesteh, M., O' Connell, D., Gity, F., Murphy-Armando, P., Yu, R., Huet, K., Toqué-Tresonne, I., Cristiano, F., Boninelli, S., Hartmann Henrichsen, H., Folmer Nielsen, P., Petersen, D. H., & Duffy, R. (2014). Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current. I E E E Transactions on Electron Devices, 61(12), 4047-4055. https://doi.org/10.1109/TED.2014.2364957

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title = "Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current",

abstract = "In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier concentration above 1020 cm −3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode I on/I off ratio ∼ 105 and ideality factor (n) ∼ 1.2, as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.",

author = "Maryam Shayesteh and {O' Connell}, Dan and Farzan Gity and Philip Murphy-Armando and Ran Yu and Karim Huet and Ines Toqu{\'e}-Tresonne and Fuccio Cristiano and Simona Boninelli and {Hartmann Henrichsen}, Henrik and {Folmer Nielsen}, Peter and Petersen, {Dirch Hjorth} and Ray Duffy",

year = "2014",

doi = "10.1109/TED.2014.2364957",

language = "English",

volume = "61",

pages = "4047--4055",

journal = "I E E E Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers",

number = "12",

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Shayesteh, M, O' Connell, D, Gity, F, Murphy-Armando, P, Yu, R, Huet, K, Toqué-Tresonne, I, Cristiano, F, Boninelli, S, Hartmann Henrichsen, H, Folmer Nielsen, P, Petersen, DH & Duffy, R 2014, 'Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current', I E E E Transactions on Electron Devices, vol. 61, no. 12, pp. 4047-4055. https://doi.org/10.1109/TED.2014.2364957

TY - JOUR

T1 - Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

AU - Shayesteh, Maryam

AU - O' Connell, Dan

AU - Gity, Farzan

AU - Murphy-Armando, Philip

AU - Yu, Ran

AU - Huet, Karim

AU - Toqué-Tresonne, Ines

AU - Cristiano, Fuccio

AU - Boninelli, Simona

AU - Hartmann Henrichsen, Henrik

AU - Folmer Nielsen, Peter

AU - Petersen, Dirch Hjorth

AU - Duffy, Ray

PY - 2014

Y1 - 2014

N2 - In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier concentration above 1020 cm −3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode I on/I off ratio ∼ 105 and ideality factor (n) ∼ 1.2, as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.

AB - In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier concentration above 1020 cm −3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode I on/I off ratio ∼ 105 and ideality factor (n) ∼ 1.2, as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.

U2 - 10.1109/TED.2014.2364957

DO - 10.1109/TED.2014.2364957

M3 - Journal article

SN - 0018-9383

VL - 61

SP - 4047

EP - 4055

JO - I E E E Transactions on Electron Devices

JF - I E E E Transactions on Electron Devices

IS - 12

ER -

Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

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