Optimization of sensitivity and noise in piezoresistive cantilevers

Xiaomei Yu, Jacob Thaysen, Ole Hansen, Anja Boisen

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    Abstract

    In this article, the sensitivity and the noise of piezoresistive cantilevers were systematically investigated with respect to the piezoresistor geometry, the piezoresistive materials, the doping dose, the annealing temperature, and the operating biased voltage. With the noise optimization results, dimension optimized array cantilevers were designed and fabricated by using single-crystal silicon, low-pressure chemical-vapor deposition (LPCVD) amorphous silicon and microcrystalline silicon as piezoresistive layers. Measurement results have shown that the smallest Hooge factor (alpha) was 3.2x10(-6), the biggest gauge factors was 95, and the minimum detectable deflection (MDD) at 6 V and 200 Hz-measurement bandwidth was 0.3 nm for a single-crystal silicon cantilever. Of the two LPCVD silicon piezoresistive cantilevers, amorphous silicon piezoresistors had relatively lower 1/f noise. The MDD for a LPCVD silicon cantilever at a 200 Hz-measurement bandwidth was 0.4 nm. For all kinds of piezoresistive cantilevers, the 1/f noises were decreased by 35%-50% and the gauge factors were decreased by 60-70% if the doping dose were increased by ten times. The annealing at 1050 degreesC for 30 min decreased 1/f noise by about 65% compared with the 950 degreesC for 10 min treatments. The cantilevers with a relatively higher-doping dose gave smaller MDD even though the gauge factors of them were decreased by nearly a factor of 1.8. The higher-biased voltages had no great improvements on the MDD due to the 1/f noise dominance.
    Original languageEnglish
    JournalJournal of Applied Physics
    Volume92
    Issue number10
    Pages (from-to)6296-6301
    ISSN0021-8979
    DOIs
    Publication statusPublished - 2002

    Bibliographical note

    Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Cite this

    @article{8439e3ecc7fd43acb6d9ed6a53c96e14,
    title = "Optimization of sensitivity and noise in piezoresistive cantilevers",
    abstract = "In this article, the sensitivity and the noise of piezoresistive cantilevers were systematically investigated with respect to the piezoresistor geometry, the piezoresistive materials, the doping dose, the annealing temperature, and the operating biased voltage. With the noise optimization results, dimension optimized array cantilevers were designed and fabricated by using single-crystal silicon, low-pressure chemical-vapor deposition (LPCVD) amorphous silicon and microcrystalline silicon as piezoresistive layers. Measurement results have shown that the smallest Hooge factor (alpha) was 3.2x10(-6), the biggest gauge factors was 95, and the minimum detectable deflection (MDD) at 6 V and 200 Hz-measurement bandwidth was 0.3 nm for a single-crystal silicon cantilever. Of the two LPCVD silicon piezoresistive cantilevers, amorphous silicon piezoresistors had relatively lower 1/f noise. The MDD for a LPCVD silicon cantilever at a 200 Hz-measurement bandwidth was 0.4 nm. For all kinds of piezoresistive cantilevers, the 1/f noises were decreased by 35{\%}-50{\%} and the gauge factors were decreased by 60-70{\%} if the doping dose were increased by ten times. The annealing at 1050 degreesC for 30 min decreased 1/f noise by about 65{\%} compared with the 950 degreesC for 10 min treatments. The cantilevers with a relatively higher-doping dose gave smaller MDD even though the gauge factors of them were decreased by nearly a factor of 1.8. The higher-biased voltages had no great improvements on the MDD due to the 1/f noise dominance.",
    author = "Xiaomei Yu and Jacob Thaysen and Ole Hansen and Anja Boisen",
    note = "Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",
    year = "2002",
    doi = "10.1063/1.1493660",
    language = "English",
    volume = "92",
    pages = "6296--6301",
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    Optimization of sensitivity and noise in piezoresistive cantilevers. / Yu, Xiaomei; Thaysen, Jacob; Hansen, Ole; Boisen, Anja.

    In: Journal of Applied Physics, Vol. 92, No. 10, 2002, p. 6296-6301.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Optimization of sensitivity and noise in piezoresistive cantilevers

    AU - Yu, Xiaomei

    AU - Thaysen, Jacob

    AU - Hansen, Ole

    AU - Boisen, Anja

    N1 - Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    PY - 2002

    Y1 - 2002

    N2 - In this article, the sensitivity and the noise of piezoresistive cantilevers were systematically investigated with respect to the piezoresistor geometry, the piezoresistive materials, the doping dose, the annealing temperature, and the operating biased voltage. With the noise optimization results, dimension optimized array cantilevers were designed and fabricated by using single-crystal silicon, low-pressure chemical-vapor deposition (LPCVD) amorphous silicon and microcrystalline silicon as piezoresistive layers. Measurement results have shown that the smallest Hooge factor (alpha) was 3.2x10(-6), the biggest gauge factors was 95, and the minimum detectable deflection (MDD) at 6 V and 200 Hz-measurement bandwidth was 0.3 nm for a single-crystal silicon cantilever. Of the two LPCVD silicon piezoresistive cantilevers, amorphous silicon piezoresistors had relatively lower 1/f noise. The MDD for a LPCVD silicon cantilever at a 200 Hz-measurement bandwidth was 0.4 nm. For all kinds of piezoresistive cantilevers, the 1/f noises were decreased by 35%-50% and the gauge factors were decreased by 60-70% if the doping dose were increased by ten times. The annealing at 1050 degreesC for 30 min decreased 1/f noise by about 65% compared with the 950 degreesC for 10 min treatments. The cantilevers with a relatively higher-doping dose gave smaller MDD even though the gauge factors of them were decreased by nearly a factor of 1.8. The higher-biased voltages had no great improvements on the MDD due to the 1/f noise dominance.

    AB - In this article, the sensitivity and the noise of piezoresistive cantilevers were systematically investigated with respect to the piezoresistor geometry, the piezoresistive materials, the doping dose, the annealing temperature, and the operating biased voltage. With the noise optimization results, dimension optimized array cantilevers were designed and fabricated by using single-crystal silicon, low-pressure chemical-vapor deposition (LPCVD) amorphous silicon and microcrystalline silicon as piezoresistive layers. Measurement results have shown that the smallest Hooge factor (alpha) was 3.2x10(-6), the biggest gauge factors was 95, and the minimum detectable deflection (MDD) at 6 V and 200 Hz-measurement bandwidth was 0.3 nm for a single-crystal silicon cantilever. Of the two LPCVD silicon piezoresistive cantilevers, amorphous silicon piezoresistors had relatively lower 1/f noise. The MDD for a LPCVD silicon cantilever at a 200 Hz-measurement bandwidth was 0.4 nm. For all kinds of piezoresistive cantilevers, the 1/f noises were decreased by 35%-50% and the gauge factors were decreased by 60-70% if the doping dose were increased by ten times. The annealing at 1050 degreesC for 30 min decreased 1/f noise by about 65% compared with the 950 degreesC for 10 min treatments. The cantilevers with a relatively higher-doping dose gave smaller MDD even though the gauge factors of them were decreased by nearly a factor of 1.8. The higher-biased voltages had no great improvements on the MDD due to the 1/f noise dominance.

    U2 - 10.1063/1.1493660

    DO - 10.1063/1.1493660

    M3 - Journal article

    VL - 92

    SP - 6296

    EP - 6301

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 10

    ER -