Abstract
We demonstrate an optimized milling technique to focused ion beam (FIB) milling in template silicon membranes for fast prototyping of nanoelectromechanical systems (NEMS). Using a single-pass milling strategy the highly topology dependent sputtering rate is boosted and shorter milling time is achieved. Drift independence is obtained for small critical features using a radial scan strategy, and a back scan routine ensures minimal line width deviation removing redeposited material. Milling a design similar to a nano four-point probe with a pitch down to 400nm we display what optimized FIB milling in NEMS development can accomplish.
Original language | English |
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Journal | Microelectronic Engineering |
Volume | 88 |
Issue number | 8 |
Pages (from-to) | 2671-2674 |
ISSN | 0167-9317 |
DOIs | |
Publication status | Published - 2011 |
Event | 36th International Conference on Micro- and Nano-Engineering - Genoa, Italy Duration: 19 Sep 2010 → 22 Sep 2010 Conference number: 36 http://www.mne2010.org/ |
Conference
Conference | 36th International Conference on Micro- and Nano-Engineering |
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Number | 36 |
Country | Italy |
City | Genoa |
Period | 19/09/2010 → 22/09/2010 |
Internet address |
Keywords
- Redeposition
- Drift
- Prototyping
- Focused Ion Beam
- NEMS