Optimization of FIB milling for rapid NEMS prototyping

Bjarke Malm; Dirch Hjorth Petersen; Anders Lei; Tim Booth; Lasse Vinther Homann; Peter Bøggild

doi:10.1016/j.mee.2010.11.049

Optimization of FIB milling for rapid NEMS prototyping

Bjarke Malm, Dirch Hjorth Petersen, Anders Lei, Tim Booth, Lasse Vinther Homann, Peter Bøggild

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

We demonstrate an optimized milling technique to focused ion beam (FIB) milling in template silicon membranes for fast prototyping of nanoelectromechanical systems (NEMS). Using a single-pass milling strategy the highly topology dependent sputtering rate is boosted and shorter milling time is achieved. Drift independence is obtained for small critical features using a radial scan strategy, and a back scan routine ensures minimal line width deviation removing redeposited material. Milling a design similar to a nano four-point probe with a pitch down to 400nm we display what optimized FIB milling in NEMS development can accomplish.

Original language	English
Journal	Microelectronic Engineering
Volume	88
Issue number	8
Pages (from-to)	2671-2674
ISSN	0167-9317
DOIs	https://doi.org/10.1016/j.mee.2010.11.049
Publication status	Published - 2011
Event	36th International Conference on Micro- and Nano-Engineering - Genoa, Italy Duration: 19 Sep 2010 → 22 Sep 2010 Conference number: 36 http://www.mne2010.org/

Conference

Conference	36th International Conference on Micro- and Nano-Engineering
Number	36
Country	Italy
City	Genoa
Period	19/09/2010 → 22/09/2010
Internet address	http://www.mne2010.org/

Keywords

Redeposition
Drift
Prototyping
Focused Ion Beam
NEMS

Cite this

Malm, B., Petersen, D. H., Lei, A., Booth, T., Homann, L. V., & Bøggild, P. (2011). Optimization of FIB milling for rapid NEMS prototyping. Microelectronic Engineering, 88(8), 2671-2674. https://doi.org/10.1016/j.mee.2010.11.049

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abstract = "We demonstrate an optimized milling technique to focused ion beam (FIB) milling in template silicon membranes for fast prototyping of nanoelectromechanical systems (NEMS). Using a single-pass milling strategy the highly topology dependent sputtering rate is boosted and shorter milling time is achieved. Drift independence is obtained for small critical features using a radial scan strategy, and a back scan routine ensures minimal line width deviation removing redeposited material. Milling a design similar to a nano four-point probe with a pitch down to 400nm we display what optimized FIB milling in NEMS development can accomplish.",

keywords = "Redeposition, Drift, Prototyping, Focused Ion Beam, NEMS",

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AU - Booth, Tim

AU - Homann, Lasse Vinther

AU - Bøggild, Peter

PY - 2011

Y1 - 2011

N2 - We demonstrate an optimized milling technique to focused ion beam (FIB) milling in template silicon membranes for fast prototyping of nanoelectromechanical systems (NEMS). Using a single-pass milling strategy the highly topology dependent sputtering rate is boosted and shorter milling time is achieved. Drift independence is obtained for small critical features using a radial scan strategy, and a back scan routine ensures minimal line width deviation removing redeposited material. Milling a design similar to a nano four-point probe with a pitch down to 400nm we display what optimized FIB milling in NEMS development can accomplish.

AB - We demonstrate an optimized milling technique to focused ion beam (FIB) milling in template silicon membranes for fast prototyping of nanoelectromechanical systems (NEMS). Using a single-pass milling strategy the highly topology dependent sputtering rate is boosted and shorter milling time is achieved. Drift independence is obtained for small critical features using a radial scan strategy, and a back scan routine ensures minimal line width deviation removing redeposited material. Milling a design similar to a nano four-point probe with a pitch down to 400nm we display what optimized FIB milling in NEMS development can accomplish.

KW - Redeposition

KW - Drift

KW - Prototyping

KW - Focused Ion Beam

KW - NEMS

U2 - 10.1016/j.mee.2010.11.049

DO - 10.1016/j.mee.2010.11.049

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

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Access to Document

10.1016/j.mee.2010.11.049

http://www.mne2010.org