Optically Active Telecom Defects in MoTe2 Fewlayers at Room Temperature

Yuxin Lei, Qiaoling Lin, Sanshui Xiao, Juntao Li, Hanlin Fang*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

The optical and electrical properties of semiconductors are strongly affected by defect states. The defects in molybdenum ditelluride (MoTe2) show the potential for quantum light emission at optical fiber communication bands. However, the observation of defect-related light emission is still limited to cryogenic temperatures. In this work, we demonstrate the deep defect states in MoTe2 fewlayers produced via a standard van der Waal material transfer method with a heating process, which enables light emission in the telecommunication O-band. The optical measurements show evidence of localized excitons and strong interaction among defects. Furthermore, the optical emission of defects depends on the thickness of the host materials. Our findings offer a new route for tailoring the optical properties of two-dimensional materials in optoelectronic applications.
Original languageEnglish
Article number1501
JournalNanomaterials
Volume13
Issue number9
Number of pages8
ISSN2079-4991
DOIs
Publication statusPublished - 2023

Keywords

  • MoTe2
  • Defect
  • Optical fiber communication

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