Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing

Jacob Riis Jensen; Jørn Märcher Hvam; Wolfgang Langbein

doi:10.1063/1.371096

Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing

Jacob Riis Jensen, Jørn Märcher Hvam, Wolfgang Langbein

TU Dortmund University

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Abstract

Knowledge of the quaternary InAlGaAs material system is very limited for the composition range relevant for growth on GaAs substrates. We report on the characterization and modeling of InAlGaAs quantum wells with AlGaAs barriers, grown pseudomorphically on a GaAs substrate with molecular beam epitaxy. The quantum wells are characterized with photoluminescence, and the measured transition energies are modeled taking into account the influence of In segregation on the shape of the well potential. From the modeling we deduce a relation for the low temperature band gap of unstrained Inx(AlyGa1 – y)1 – xAs, for 0

Original language	English
Journal	Journal of Applied Physics
Volume	86
Issue number	5
Pages (from-to)	2584-2589
ISSN	0021-8979
DOIs	https://doi.org/10.1063/1.371096
Publication status	Published - 1999

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Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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title = "Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing",

abstract = "Knowledge of the quaternary InAlGaAs material system is very limited for the composition range relevant for growth on GaAs substrates. We report on the characterization and modeling of InAlGaAs quantum wells with AlGaAs barriers, grown pseudomorphically on a GaAs substrate with molecular beam epitaxy. The quantum wells are characterized with photoluminescence, and the measured transition energies are modeled taking into account the influence of In segregation on the shape of the well potential. From the modeling we deduce a relation for the low temperature band gap of unstrained Inx(AlyGa1 – y)1 – xAs, for 0 ",

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AU - Langbein, Wolfgang

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N2 - Knowledge of the quaternary InAlGaAs material system is very limited for the composition range relevant for growth on GaAs substrates. We report on the characterization and modeling of InAlGaAs quantum wells with AlGaAs barriers, grown pseudomorphically on a GaAs substrate with molecular beam epitaxy. The quantum wells are characterized with photoluminescence, and the measured transition energies are modeled taking into account the influence of In segregation on the shape of the well potential. From the modeling we deduce a relation for the low temperature band gap of unstrained Inx(AlyGa1 – y)1 – xAs, for 0

AB - Knowledge of the quaternary InAlGaAs material system is very limited for the composition range relevant for growth on GaAs substrates. We report on the characterization and modeling of InAlGaAs quantum wells with AlGaAs barriers, grown pseudomorphically on a GaAs substrate with molecular beam epitaxy. The quantum wells are characterized with photoluminescence, and the measured transition energies are modeled taking into account the influence of In segregation on the shape of the well potential. From the modeling we deduce a relation for the low temperature band gap of unstrained Inx(AlyGa1 – y)1 – xAs, for 0

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ER -

Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing

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