Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing

Jacob Riis Jensen, Jørn Märcher Hvam, Wolfgang Langbein

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    Abstract

    Knowledge of the quaternary InAlGaAs material system is very limited for the composition range relevant for growth on GaAs substrates. We report on the characterization and modeling of InAlGaAs quantum wells with AlGaAs barriers, grown pseudomorphically on a GaAs substrate with molecular beam epitaxy. The quantum wells are characterized with photoluminescence, and the measured transition energies are modeled taking into account the influence of In segregation on the shape of the well potential. From the modeling we deduce a relation for the low temperature band gap of unstrained Inx(AlyGa1 – y)1 – xAs, for 0
    Original languageEnglish
    JournalJournal of Applied Physics
    Volume86
    Issue number5
    Pages (from-to)2584-2589
    ISSN0021-8979
    DOIs
    Publication statusPublished - 1999

    Bibliographical note

    Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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