Optical near-field lithography on hydrogen-passivated silicon surfaces

Steen Madsen; Matthias Müllenborn; Karen Birkelund; Francois Grey

doi:10.1063/1.117781

Optical near-field lithography on hydrogen-passivated silicon surfaces

Steen Madsen, Matthias Müllenborn, Karen Birkelund, Francois Grey

Research output: Contribution to journal › Journal article › Research › peer-review

470 Downloads (Pure)

Abstract

We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	69
Issue number	4
Pages (from-to)	544-546
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.117781
Publication status	Published - 1996

Bibliographical note

Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

SPECTROSCOPY
FABRICATION
NANOSTRUCTURES
OXIDATION
ATOMIC-FORCE MICROSCOPE
SCANNING TUNNELING MICROSCOPE

Access to Document

10.1063/1.117781

SteenFinal published version, 1.95 MB

http://link.aip.org/link/?APPLAB/69/544/1

Fingerprint Dive into the research topics of 'Optical near-field lithography on hydrogen-passivated silicon surfaces'. Together they form a unique fingerprint.

Cite this

@article{23a8791dda164a5da9128f1f642ca31f,

title = "Optical near-field lithography on hydrogen-passivated silicon surfaces",

abstract = "We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.",

keywords = "SPECTROSCOPY, FABRICATION, NANOSTRUCTURES, OXIDATION, ATOMIC-FORCE MICROSCOPE, SCANNING TUNNELING MICROSCOPE",

author = "Steen Madsen and Matthias M{\"u}llenborn and Karen Birkelund and Francois Grey",

note = "Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "1996",

doi = "10.1063/1.117781",

language = "English",

volume = "69",

pages = "544--546",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Optical near-field lithography on hydrogen-passivated silicon surfaces

AU - Madsen, Steen

AU - Müllenborn, Matthias

AU - Birkelund, Karen

AU - Grey, Francois

N1 - Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 1996

Y1 - 1996

N2 - We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.

AB - We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.

KW - SPECTROSCOPY

KW - FABRICATION

KW - NANOSTRUCTURES

KW - OXIDATION

KW - ATOMIC-FORCE MICROSCOPE

KW - SCANNING TUNNELING MICROSCOPE

U2 - 10.1063/1.117781

DO - 10.1063/1.117781

M3 - Journal article

VL - 69

SP - 544

EP - 546

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

ER -