Optical near-field lithography on hydrogen-passivated silicon surfaces

Steen Madsen, Matthias Müllenborn, Karen Birkelund, Francois Grey

    Research output: Contribution to journal › Journal article › Research › peer-review

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    Abstract

    We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume69
    Issue number4
    Pages (from-to)544-546
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1996

    Bibliographical note

    Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • SPECTROSCOPY
    • FABRICATION
    • NANOSTRUCTURES
    • OXIDATION
    • ATOMIC-FORCE MICROSCOPE
    • SCANNING TUNNELING MICROSCOPE

    Cite this

    Madsen, Steen ; Müllenborn, Matthias ; Birkelund, Karen ; Grey, Francois. / Optical near-field lithography on hydrogen-passivated silicon surfaces. In: Applied Physics Letters. 1996 ; Vol. 69, No. 4. pp. 544-546.
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    title = "Optical near-field lithography on hydrogen-passivated silicon surfaces",
    abstract = "We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.",
    keywords = "SPECTROSCOPY, FABRICATION, NANOSTRUCTURES, OXIDATION, ATOMIC-FORCE MICROSCOPE, SCANNING TUNNELING MICROSCOPE",
    author = "Steen Madsen and Matthias M{\"u}llenborn and Karen Birkelund and Francois Grey",
    note = "Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",
    year = "1996",
    doi = "10.1063/1.117781",
    language = "English",
    volume = "69",
    pages = "544--546",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics",
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    Madsen, S, Müllenborn, M, Birkelund, K & Grey, F 1996, 'Optical near-field lithography on hydrogen-passivated silicon surfaces', Applied Physics Letters, vol. 69, no. 4, pp. 544-546. https://doi.org/10.1063/1.117781

    Optical near-field lithography on hydrogen-passivated silicon surfaces. / Madsen, Steen; Müllenborn, Matthias; Birkelund, Karen; Grey, Francois.

    In: Applied Physics Letters, Vol. 69, No. 4, 1996, p. 544-546.

    Research output: Contribution to journal › Journal article › Research › peer-review

    TY - JOUR

    T1 - Optical near-field lithography on hydrogen-passivated silicon surfaces

    AU - Madsen, Steen

    AU - Müllenborn, Matthias

    AU - Birkelund, Karen

    AU - Grey, Francois

    N1 - Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    PY - 1996

    Y1 - 1996

    N2 - We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.

    AB - We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.

    KW - SPECTROSCOPY

    KW - FABRICATION

    KW - NANOSTRUCTURES

    KW - OXIDATION

    KW - ATOMIC-FORCE MICROSCOPE

    KW - SCANNING TUNNELING MICROSCOPE

    U2 - 10.1063/1.117781

    DO - 10.1063/1.117781

    M3 - Journal article

    VL - 69

    SP - 544

    EP - 546

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 4

    ER -

    Madsen S, Müllenborn M, Birkelund K, Grey F. Optical near-field lithography on hydrogen-passivated silicon surfaces. Applied Physics Letters. 1996;69(4):544-546. https://doi.org/10.1063/1.117781

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