Optical near-field lithography on hydrogen-passivated silicon surfaces

Steen Madsen, Matthias Müllenborn, Karen Birkelund, Francois Grey

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    Abstract

    We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume69
    Issue number4
    Pages (from-to)544-546
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1996

    Bibliographical note

    Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • SPECTROSCOPY
    • FABRICATION
    • NANOSTRUCTURES
    • OXIDATION
    • ATOMIC-FORCE MICROSCOPE
    • SCANNING TUNNELING MICROSCOPE

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