Optical characterization of low-temperature grown GaAs by transmission measurements above the band gap

D. Streb; M. Ruff; S. U. Dankowski; P. Kiesel; M. Kneissl; S. Malzer; Ulrich Dieter Felix Keil; G. H. Döhler

doi:10.1116/1.588918

Optical characterization of low-temperature grown GaAs by transmission measurements above the band gap

D. Streb
, M. Ruff
, S. U. Dankowski
, P. Kiesel
, M. Kneissl
, S. Malzer
, Ulrich Dieter Felix Keil
, G. H. Döhler

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We report on transmission measurements on low temperature grown GaAs and standard GaAs for a spectral range 0.8-2.8 eV. We measured a drastic reduction of absorption due to annealing over the whole spectral range. The absorption changes depend on the annealing temperature and occur in two individual phases. Additional transmission measurements on samples without antireflection coating confirm our earlier results of an annealing induced refractive index change of Δn≈0.2.

Original language	English
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	14
Issue number	3
Pages (from-to)	2275-2277
ISSN	1071-1023
DOIs	https://doi.org/10.1116/1.588918
Publication status	Published - 1996

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title = "Optical characterization of low-temperature grown GaAs by transmission measurements above the band gap",

abstract = "We report on transmission measurements on low temperature grown GaAs and standard GaAs for a spectral range 0.8-2.8 eV. We measured a drastic reduction of absorption due to annealing over the whole spectral range. The absorption changes depend on the annealing temperature and occur in two individual phases. Additional transmission measurements on samples without antireflection coating confirm our earlier results of an annealing induced refractive index change of Δn≈0.2.",

author = "D. Streb and M. Ruff and Dankowski, \{S. U.\} and P. Kiesel and M. Kneissl and S. Malzer and Keil, \{Ulrich Dieter Felix\} and D{\"o}hler, \{G. H.\}",

year = "1996",

doi = "10.1116/1.588918",

language = "English",

volume = "14",

pages = "2275--2277",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

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TY - JOUR

T1 - Optical characterization of low-temperature grown GaAs by transmission measurements above the band gap

AU - Streb, D.

AU - Ruff, M.

AU - Dankowski, S. U.

AU - Kiesel, P.

AU - Kneissl, M.

AU - Malzer, S.

AU - Keil, Ulrich Dieter Felix

AU - Döhler, G. H.

PY - 1996

Y1 - 1996

N2 - We report on transmission measurements on low temperature grown GaAs and standard GaAs for a spectral range 0.8-2.8 eV. We measured a drastic reduction of absorption due to annealing over the whole spectral range. The absorption changes depend on the annealing temperature and occur in two individual phases. Additional transmission measurements on samples without antireflection coating confirm our earlier results of an annealing induced refractive index change of Δn≈0.2.

AB - We report on transmission measurements on low temperature grown GaAs and standard GaAs for a spectral range 0.8-2.8 eV. We measured a drastic reduction of absorption due to annealing over the whole spectral range. The absorption changes depend on the annealing temperature and occur in two individual phases. Additional transmission measurements on samples without antireflection coating confirm our earlier results of an annealing induced refractive index change of Δn≈0.2.

U2 - 10.1116/1.588918

DO - 10.1116/1.588918

M3 - Journal article

SN - 1071-1023

VL - 14

SP - 2275

EP - 2277

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Optical characterization of low-temperature grown GaAs by transmission measurements above the band gap

Abstract

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