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On-Wafer 16-Term Calibration for Characterization of InP HBTs Featuring Sub-THz fmax

  • Abhijeet Kanitkar
  • , Ralf Doerner
  • , Tom K. Johansen
  • , Wolfgang Heinrich
  • , Thomas Flisgen*
  • *Corresponding author for this work
  • Ferdinand Braun Insitute
  • Brandenburg University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

In this paper, InP HBTs featuring maximum oscillation frequencies fmax in the sub-THz range are characterized by conducting on-wafer 16 -term calibration. A direct comparison between 8-term calibration and 16-term calibration demonstrates that the 16 -term calibration improves the way transistor Mason's gain is derived. The on-wafer measurements of transistors with emitter widths of 0.5μm and 0.85 μm yield extracted fmax values of 0.44 THz and 0.33 THz, respectively. The study shows that choosing proper on-wafer calibration techniques is highly important for reliable transistor characterization.

Original languageEnglish
Title of host publication2025 55th European Microwave Conference (EuMC)
PublisherIEEE
Publication date2025
Pages687-690
ISBN (Electronic)978-2-87487-081-1
DOIs
Publication statusPublished - 2025
Event55th European Microwave Conference (EuMC) - Utrecht, Netherlands
Duration: 23 Sept 2025 → 25 Sept 2025

Conference

Conference55th European Microwave Conference (EuMC)
Country/TerritoryNetherlands
CityUtrecht
Period23/09/2025 → 25/09/2025

Keywords

  • 16-term calibration
  • 8-term calibration
  • InP HBTs
  • On-wafer measurements
  • Transistor characterization

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