On the surface recombination current of metal-insulator semiconductor inversion layer solar cells

Otto M. Nielsen

Research output: Contribution to journalJournal articleResearchpeer-review

238 Downloads (Pure)

Abstract

Current voltage characteristics have been obtained under dark and illuminated conditions for Al-SiO2-pSi metal-insulator semiconductor inversion layer solar cells. The cells were fabricated on ~ and ~ oriented substrates with resistivities in the range of 8–15 Omega cm. For ~ cells the open circuit voltages Voc were found to be lower than for ~ cells. The measured differences in Voc were higher than expected from the dark characteristics which is explained as a difference in the surface recombination current due to a higher interface state density Nss of ~ cells. Journal of Applied Physics is copyrighted by The American Institute of Physics.
Original languageEnglish
JournalJournal of Applied Physics
Volume52
Issue number9
Pages (from-to)5870-5872
ISSN0021-8979
DOIs
Publication statusPublished - 1981

Bibliographical note

Copyright (1981) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Cite this