On the surface recombination current of metal-insulator semiconductor inversion layer solar cells

Otto M. Nielsen

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Current voltage characteristics have been obtained under dark and illuminated conditions for Al-SiO2-pSi metal-insulator semiconductor inversion layer solar cells. The cells were fabricated on ~ and ~ oriented substrates with resistivities in the range of 8–15 Omega cm. For ~ cells the open circuit voltages Voc were found to be lower than for ~ cells. The measured differences in Voc were higher than expected from the dark characteristics which is explained as a difference in the surface recombination current due to a higher interface state density Nss of ~ cells. Journal of Applied Physics is copyrighted by The American Institute of Physics.
Original languageEnglish
JournalJournal of Applied Physics
Issue number9
Pages (from-to)5870-5872
Publication statusPublished - 1981

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Copyright (1981) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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