On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

A. E. Zhukov; L. V. Asryan; Elizaveta Semenova; F. I. Zubov; N. V. Kryzhanovskaya; M. V. Maximov

doi:10.1134/s1063782615070258

On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

A. E. Zhukov, L. V. Asryan, Elizaveta Semenova, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maximov

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds ((InAlGaAs)-Al-0.232-Ga-0.594-As-0.174/(AlGaAs)-Ga-0.355-As-0.645) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution.

Original language	English
Journal	Semiconductors
Volume	49
Issue number	7
Pages (from-to)	935-938
ISSN	1063-7826
DOIs	https://doi.org/10.1134/s1063782615070258
Publication status	Published - 2015

Keywords

PHYSICS,
Physics
Magnetism, Magnetic Materials
Physics, general
Physics and Astronomy

Access to Document

10.1134/s1063782615070258

OpenUrl availability

Full text

Cite this

@article{fff20ad40c5c43e9b2a680da53555ea0,

title = "On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates",

abstract = "Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds ((InAlGaAs)-Al-0.232-Ga-0.594-As-0.174/(AlGaAs)-Ga-0.355-As-0.645) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution.",

keywords = "PHYSICS,, Physics, Magnetism, Magnetic Materials, Physics, general, Physics and Astronomy",

author = "Zhukov, {A. E.} and Asryan, {L. V.} and Elizaveta Semenova and Zubov, {F. I.} and Kryzhanovskaya, {N. V.} and Maximov, {M. V.}",

year = "2015",

doi = "10.1134/s1063782615070258",

language = "English",

volume = "49",

pages = "935--938",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "M A I K Nauka - Interperiodica",

number = "7",

}

TY - JOUR

T1 - On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

AU - Zhukov, A. E.

AU - Asryan, L. V.

AU - Semenova, Elizaveta

AU - Zubov, F. I.

AU - Kryzhanovskaya, N. V.

AU - Maximov, M. V.

PY - 2015

Y1 - 2015

N2 - Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds ((InAlGaAs)-Al-0.232-Ga-0.594-As-0.174/(AlGaAs)-Ga-0.355-As-0.645) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution.

AB - Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds ((InAlGaAs)-Al-0.232-Ga-0.594-As-0.174/(AlGaAs)-Ga-0.355-As-0.645) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution.

KW - PHYSICS,

KW - Physics

KW - Magnetism, Magnetic Materials

KW - Physics, general

KW - Physics and Astronomy

U2 - 10.1134/s1063782615070258

DO - 10.1134/s1063782615070258

M3 - Journal article

SN - 1063-7826

VL - 49

SP - 935

EP - 938

JO - Semiconductors

JF - Semiconductors

IS - 7

ER -

On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

Abstract

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this