On the nature of cross-hatch patterns on compositionally graded Si1−xGex alloy layers

Sergey Yu. Shiryaev, Flemming Jensen, Jon Wulff Petersen

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    Abstract

    The effect of strain relaxation on the surface morphology of compositionally graded Si1-xGex layers grown at 550-degrees-C has been investigated by a combination of transmission electron and atomic force microscopy. By annealing unrelaxed graded layers, we have found that shear displacements caused by dislocation glide roughen the surface dramatically. This effect is attributed to the formation of a network of dislocation clusters which give rise to the pronounced slip-band pattern on the surface of the graded layers. It is shown that the surface plastic displacements produced by such a network during growth of the graded layer contribute significantly to the formation of the cross-hatch patterns.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume64
    Issue number24
    Pages (from-to)3305-3307
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1994

    Bibliographical note

    Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

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