On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

F. Zubov; Elizaveta Semenova; Irina Kulkova; Kresten Yvind; N. Kryzhanovskaya; M. Maximov; A. Zhukov

doi:10.1134/S1063782617100207

On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

F. Zubov, Elizaveta Semenova, Irina Kulkova, Kresten Yvind, N. Kryzhanovskaya, M. Maximov, A. Zhukov

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a band-gap width of 1.15 eV serves as the waveguide/matrix layer. A high characteristic temperature of the threshold current, T₀ = 205 K, is reached in the temperature range 20–50°C in ridge-waveguide laser diodes. A correlation between the values of T₀ and the band-gap width of the waveguide layers is found.

Original language	English
Journal	Semiconductors
Volume	51
Issue number	10
Pages (from-to)	1332-1336
ISSN	1063-7826
DOIs	https://doi.org/10.1134/S1063782617100207
Publication status	Published - 2017

Access to Document

10.1134/S1063782617100207

SFX availability

Full text

Cite this

@article{ee85f9e044db42f38b9ab823c40ab12f,

title = "On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate",

abstract = "We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a band-gap width of 1.15 eV serves as the waveguide/matrix layer. A high characteristic temperature of the threshold current, T0 = 205 K, is reached in the temperature range 20–50°C in ridge-waveguide laser diodes. A correlation between the values of T0 and the band-gap width of the waveguide layers is found.",

author = "F. Zubov and Elizaveta Semenova and Irina Kulkova and Kresten Yvind and N. Kryzhanovskaya and M. Maximov and A. Zhukov",

year = "2017",

doi = "10.1134/S1063782617100207",

language = "English",

volume = "51",

pages = "1332--1336",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "M A I K Nauka - Interperiodica",

number = "10",

}

TY - JOUR

T1 - On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

AU - Zubov, F.

AU - Semenova, Elizaveta

AU - Kulkova, Irina

AU - Yvind, Kresten

AU - Kryzhanovskaya, N.

AU - Maximov, M.

AU - Zhukov, A.

PY - 2017

Y1 - 2017

N2 - We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a band-gap width of 1.15 eV serves as the waveguide/matrix layer. A high characteristic temperature of the threshold current, T0 = 205 K, is reached in the temperature range 20–50°C in ridge-waveguide laser diodes. A correlation between the values of T0 and the band-gap width of the waveguide layers is found.

AB - We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a band-gap width of 1.15 eV serves as the waveguide/matrix layer. A high characteristic temperature of the threshold current, T0 = 205 K, is reached in the temperature range 20–50°C in ridge-waveguide laser diodes. A correlation between the values of T0 and the band-gap width of the waveguide layers is found.

U2 - 10.1134/S1063782617100207

DO - 10.1134/S1063782617100207

M3 - Journal article

VL - 51

SP - 1332

EP - 1336

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 10

ER -

On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

Abstract

Access to Document

SFX availability

Fingerprint

Cite this