On the Enhanced Phosphorus Doping of Nanotextured Black Silicon

Giuseppe Scardera, Shaozhou Wang, Yu Zhang, Muhammad Umair Khan, Shuai Zou, Daqi Zhang, Rasmus Schmidt Davidsen, Ole Hansen, Ly Mai, David N.R. Payne, Bram Hoex, Malcolm D. Abbott*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

The integration of nanotextured black silicon (B-Si) into solar cells is often complicated by its enhanced phosphorus doping effect, which is typically attributed to increased surface area. In this article, we show that B-Si's surface-to-volume ratio, or specific surface area (SSA), which is directly related to surface reactivity, is a better indicator of reduced sheet resistance. We investigate six B-Si conditions with varying dimensions based on two morphology types prepared using metal-catalyzed chemical etching and reactive-ion etching. We demonstrate that for a POCl$_{3}$ diffusion, B-Si sheet resistance decreases with increasing SSA, regardless of surface area. 2-D dopant contrast imaging of different textures with similar surface areas also indicates that the extent of doping is enhanced with increasing SSA. 3-D diffusion simulations of nanocones show that both the extent of radial doping within a texture feature and the metallurgical junction depth in the underlying substrate increase with increasing SSA. We suggest SSA should be considered more readily when studying B-Si and its integration into solar cells.
Original languageEnglish
JournalIEEE Journal of Photovoltaics
Number of pages8
ISSN2156-3381
DOIs
Publication statusAccepted/In press - 2021

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