On the emergence of conductivity at SrTiO3-based oxide interfaces - an in-situ study

Merlin von Soosten, Dennis Valbjørn Christensen, Chang-Beom Eom, Thomas S. Jespersen, Yunzhong Chen, Nini Pryds*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

22 Downloads (Pure)

Abstract

Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk properties of the resulting heterostructures challenge our fundamental understanding. Insights on the early growth stage of interfaces and its influence on resulting physical properties are scarce - typically the information is inferred from post growth characterization. Here, we report on real time measurements of the transport properties of SrTiO3-based heterostructures at room temperature, while the heterostructure is forming. Surprisingly, we detect a conducting interface already at the initial growth stage, much earlier than the well-established critical thickness limit for observing conductivity ex-situ after sample growth. We investigate how the conductivity depends on various physical processes occurring during pulsed laser depositions, including light illumination, particle bombardment by the plasma plume, interactions with the atmosphere and oxygen migration from SrTiO3 to the thin films of varying compositions. We conclude that the conductivity in these room-temperature grown interfaces stem from oxygen vacancies with a concentration determined primarily by a balance between vacancy formation through particle bombardment and interfacial redox reaction and vacancy annihilation through oxidation. Using this approach, we propose a new design tool to control the electrical properties of interfaces in real time during their formation.
Original languageEnglish
Article number18005
JournalScientific Reports
Volume9
Issue number1
Number of pages7
ISSN2045-2322
DOIs
Publication statusPublished - 2019

Cite this

@article{9fc709d8dcd94af3be5e8f5dda781ead,
title = "On the emergence of conductivity at SrTiO3-based oxide interfaces - an in-situ study",
abstract = "Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk properties of the resulting heterostructures challenge our fundamental understanding. Insights on the early growth stage of interfaces and its influence on resulting physical properties are scarce - typically the information is inferred from post growth characterization. Here, we report on real time measurements of the transport properties of SrTiO3-based heterostructures at room temperature, while the heterostructure is forming. Surprisingly, we detect a conducting interface already at the initial growth stage, much earlier than the well-established critical thickness limit for observing conductivity ex-situ after sample growth. We investigate how the conductivity depends on various physical processes occurring during pulsed laser depositions, including light illumination, particle bombardment by the plasma plume, interactions with the atmosphere and oxygen migration from SrTiO3 to the thin films of varying compositions. We conclude that the conductivity in these room-temperature grown interfaces stem from oxygen vacancies with a concentration determined primarily by a balance between vacancy formation through particle bombardment and interfacial redox reaction and vacancy annihilation through oxidation. Using this approach, we propose a new design tool to control the electrical properties of interfaces in real time during their formation.",
author = "{von Soosten}, Merlin and Christensen, {Dennis Valbj{\o}rn} and Chang-Beom Eom and Jespersen, {Thomas S.} and Yunzhong Chen and Nini Pryds",
year = "2019",
doi = "10.1038/s41598-019-54463-w",
language = "English",
volume = "9",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

On the emergence of conductivity at SrTiO3-based oxide interfaces - an in-situ study. / von Soosten, Merlin; Christensen, Dennis Valbjørn; Eom, Chang-Beom; Jespersen, Thomas S.; Chen, Yunzhong; Pryds, Nini.

In: Scientific Reports, Vol. 9, No. 1, 18005, 2019.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - On the emergence of conductivity at SrTiO3-based oxide interfaces - an in-situ study

AU - von Soosten, Merlin

AU - Christensen, Dennis Valbjørn

AU - Eom, Chang-Beom

AU - Jespersen, Thomas S.

AU - Chen, Yunzhong

AU - Pryds, Nini

PY - 2019

Y1 - 2019

N2 - Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk properties of the resulting heterostructures challenge our fundamental understanding. Insights on the early growth stage of interfaces and its influence on resulting physical properties are scarce - typically the information is inferred from post growth characterization. Here, we report on real time measurements of the transport properties of SrTiO3-based heterostructures at room temperature, while the heterostructure is forming. Surprisingly, we detect a conducting interface already at the initial growth stage, much earlier than the well-established critical thickness limit for observing conductivity ex-situ after sample growth. We investigate how the conductivity depends on various physical processes occurring during pulsed laser depositions, including light illumination, particle bombardment by the plasma plume, interactions with the atmosphere and oxygen migration from SrTiO3 to the thin films of varying compositions. We conclude that the conductivity in these room-temperature grown interfaces stem from oxygen vacancies with a concentration determined primarily by a balance between vacancy formation through particle bombardment and interfacial redox reaction and vacancy annihilation through oxidation. Using this approach, we propose a new design tool to control the electrical properties of interfaces in real time during their formation.

AB - Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk properties of the resulting heterostructures challenge our fundamental understanding. Insights on the early growth stage of interfaces and its influence on resulting physical properties are scarce - typically the information is inferred from post growth characterization. Here, we report on real time measurements of the transport properties of SrTiO3-based heterostructures at room temperature, while the heterostructure is forming. Surprisingly, we detect a conducting interface already at the initial growth stage, much earlier than the well-established critical thickness limit for observing conductivity ex-situ after sample growth. We investigate how the conductivity depends on various physical processes occurring during pulsed laser depositions, including light illumination, particle bombardment by the plasma plume, interactions with the atmosphere and oxygen migration from SrTiO3 to the thin films of varying compositions. We conclude that the conductivity in these room-temperature grown interfaces stem from oxygen vacancies with a concentration determined primarily by a balance between vacancy formation through particle bombardment and interfacial redox reaction and vacancy annihilation through oxidation. Using this approach, we propose a new design tool to control the electrical properties of interfaces in real time during their formation.

U2 - 10.1038/s41598-019-54463-w

DO - 10.1038/s41598-019-54463-w

M3 - Journal article

VL - 9

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 18005

ER -