On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering: Paper

Andrea Crovetto, Tobias Sand Ottsen, Eugen Stamate, Daniel Kjær, Jørgen Schou, Ole Hansen

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Abstract

The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low- and intermediate-pressure regime, we find a generalized dependence of the electrical properties, grain size, texture, and Al content on compressive stress, regardless of sputtering pressure or position on the substrate. In a high-pressure regime, a porous microstructure limits the achievable resistivity and causes it to increase over time as well. The primary cause of inhomogeneity in the electrical properties is identified as energetic particle bombardment. Inhomogeneity in oxygen content is also observed, but its effect on the electrical properties is small and limited to the carrier mobility.
Original languageEnglish
Article number295101
JournalJournal of Physics D: Applied Physics
Volume49
Issue number29
Number of pages11
ISSN0022-3727
DOIs
Publication statusPublished - 2016

Keywords

  • ZnO,
  • AZO
  • Sputtering
  • Stress
  • Correlations
  • Line profile analysis
  • Bombardment

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