Ohmic contacts to n-type InP for high-speed silicon-on-chip vertical-cavity lasers

Vladimir Topic; Sushil Tandukar; Gyeong Cheol Park; Il Sug Chung

doi:10.1109/OECC.2018.8729938

Ohmic contacts to n-type InP for high-speed silicon-on-chip vertical-cavity lasers

Vladimir Topic, Sushil Tandukar, Gyeong Cheol Park, Il Sug Chung

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

We report a contact scheme for high-speed InP-on-silicon vertical-cavity lasers. Using the contact scheme, light emitting diodes have been fabricated and characterized.

Original language	English
Title of host publication	Proceedings of 23rd Opto-Electronics and Communications Conference
Number of pages	2
Publisher	IEEE
Publication date	1 Jul 2018
Article number	8729938
ISBN (Electronic)	9781538691458
DOIs	https://doi.org/10.1109/OECC.2018.8729938
Publication status	Published - 1 Jul 2018
Event	23rd Opto-Electronics and Communications Conference - Jeju, Korea, Republic of Duration: 2 Jul 2018 → 6 Jul 2018 Conference number: 23

Conference

Conference	23rd Opto-Electronics and Communications Conference
Number	23
Country/Territory	Korea, Republic of
City	Jeju
Period	02/07/2018 → 06/07/2018

Series	23rd Opto-Electronics and Communications Conference, OECC 2018

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title = "Ohmic contacts to n-type InP for high-speed silicon-on-chip vertical-cavity lasers",

abstract = "We report a contact scheme for high-speed InP-on-silicon vertical-cavity lasers. Using the contact scheme, light emitting diodes have been fabricated and characterized.",

author = "Vladimir Topic and Sushil Tandukar and Park, {Gyeong Cheol} and Chung, {Il Sug}",

year = "2018",

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doi = "10.1109/OECC.2018.8729938",

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publisher = "IEEE",

booktitle = "Proceedings of 23rd Opto-Electronics and Communications Conference",

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note = "23rd Opto-Electronics and Communications Conference, OECC 2018 ; Conference date: 02-07-2018 Through 06-07-2018",

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Topic, V, Tandukar, S, Park, GC & Chung, IS 2018, Ohmic contacts to n-type InP for high-speed silicon-on-chip vertical-cavity lasers. in Proceedings of 23rd Opto-Electronics and Communications Conference., 8729938, IEEE, 23rd Opto-Electronics and Communications Conference, OECC 2018, 23rd Opto-Electronics and Communications Conference, Jeju, Korea, Republic of, 02/07/2018. https://doi.org/10.1109/OECC.2018.8729938

Ohmic contacts to n-type InP for high-speed silicon-on-chip vertical-cavity lasers. / Topic, Vladimir; Tandukar, Sushil; Park, Gyeong Cheol et al.
Proceedings of 23rd Opto-Electronics and Communications Conference. IEEE, 2018. 8729938 (23rd Opto-Electronics and Communications Conference, OECC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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T1 - Ohmic contacts to n-type InP for high-speed silicon-on-chip vertical-cavity lasers

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AU - Park, Gyeong Cheol

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N1 - Conference code: 23

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N2 - We report a contact scheme for high-speed InP-on-silicon vertical-cavity lasers. Using the contact scheme, light emitting diodes have been fabricated and characterized.

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M3 - Article in proceedings

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BT - Proceedings of 23rd Opto-Electronics and Communications Conference

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Y2 - 2 July 2018 through 6 July 2018

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Ohmic contacts to n-type InP for high-speed silicon-on-chip vertical-cavity lasers

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