Ohmic contacts to n-type InP for high-speed silicon-on-chip vertical-cavity lasers

Vladimir Topic, Sushil Tandukar, Gyeong Cheol Park, Il Sug Chung

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Abstract

We report a contact scheme for high-speed InP-on-silicon vertical-cavity lasers. Using the contact scheme, light emitting diodes have been fabricated and characterized.

Original languageEnglish
Title of host publicationProceedings of 23rd Opto-Electronics and Communications Conference
Number of pages2
PublisherIEEE
Publication date1 Jul 2018
Article number8729938
ISBN (Electronic)9781538691458
DOIs
Publication statusPublished - 1 Jul 2018
Event23rd Opto-Electronics and Communications Conference, OECC 2018 - Jeju, Korea, Republic of
Duration: 2 Jul 20186 Jul 2018

Conference

Conference23rd Opto-Electronics and Communications Conference, OECC 2018
CountryKorea, Republic of
CityJeju
Period02/07/201806/07/2018
Series23rd Opto-Electronics and Communications Conference, OECC 2018

Cite this

Topic, V., Tandukar, S., Park, G. C., & Chung, I. S. (2018). Ohmic contacts to n-type InP for high-speed silicon-on-chip vertical-cavity lasers. In Proceedings of 23rd Opto-Electronics and Communications Conference [8729938] IEEE. 23rd Opto-Electronics and Communications Conference, OECC 2018 https://doi.org/10.1109/OECC.2018.8729938