Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

Henrik Porte; Peter Uhd Jepsen; Nart Daghestani; Edik Rafailov; Dmitry Turchinovich

doi:10.1109/LEOS.2009.5343415

Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

Henrik Porte, Peter Uhd Jepsen, Nart Daghestani, Edik Rafailov, Dmitry Turchinovich

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.

Original language	English
Title of host publication	IEEE LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09.
Publisher	IEEE Press
Publication date	2009
Pages	ThD1
ISBN (Print)	978-1-4244-3680-4
DOIs	https://doi.org/10.1109/LEOS.2009.5343415
Publication status	Published - 2009
Event	22nd Annual Meeting of IEEE Photonics Society - Belek-Antalya, Turkey Duration: 4 Oct 2009 → 8 Oct 2009 Conference number: 22 http://photonicssociety.org/newsletters/aug09/22nd_Annual_Meeting.html

Conference

Conference	22nd Annual Meeting of IEEE Photonics Society
Number	22
Country/Territory	Turkey
City	Belek-Antalya
Period	04/10/2009 → 08/10/2009
Internet address	http://photonicssociety.org/newsletters/aug09/22nd_Annual_Meeting.html

Bibliographical note

Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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title = "Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy",

abstract = "Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.",

author = "Henrik Porte and Jepsen, {Peter Uhd} and Nart Daghestani and Edik Rafailov and Dmitry Turchinovich",

note = "Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.; 22nd Annual Meeting of IEEE Photonics Society ; Conference date: 04-10-2009 Through 08-10-2009",

year = "2009",

doi = "10.1109/LEOS.2009.5343415",

language = "English",

isbn = "978-1-4244-3680-4",

pages = "ThD1",

booktitle = "IEEE LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09.",

publisher = "IEEE Press",

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Porte, H, Jepsen, PU, Daghestani, N, Rafailov, E & Turchinovich, D 2009, Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy. in IEEE LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09.. IEEE Press, pp. ThD1, 22nd Annual Meeting of IEEE Photonics Society, Belek-Antalya, Turkey, 04/10/2009. https://doi.org/10.1109/LEOS.2009.5343415

Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy. / Porte, Henrik; Jepsen, Peter Uhd; Daghestani, Nart et al.
IEEE LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09.. IEEE Press, 2009. p. ThD1.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

AU - Porte, Henrik

AU - Jepsen, Peter Uhd

AU - Daghestani, Nart

AU - Rafailov, Edik

AU - Turchinovich, Dmitry

N1 - Conference code: 22

PY - 2009

Y1 - 2009

N2 - Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.

AB - Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.

U2 - 10.1109/LEOS.2009.5343415

DO - 10.1109/LEOS.2009.5343415

M3 - Article in proceedings

SN - 978-1-4244-3680-4

SP - ThD1

BT - IEEE LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09.

PB - IEEE Press

T2 - 22nd Annual Meeting of IEEE Photonics Society

Y2 - 4 October 2009 through 8 October 2009

ER -

Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

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