Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

Henrik Porte, Peter Uhd Jepsen, Nart Daghestani, Edik Rafailov, Dmitry Turchinovich

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

211 Downloads (Pure)

Abstract

Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.
Original languageEnglish
Title of host publicationIEEE LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09.
PublisherIEEE Press
Publication date2009
PagesThD1
ISBN (Print)978-1-4244-3680-4
DOIs
Publication statusPublished - 2009
Event22nd Annual Meeting of IEEE Photonics Society - Belek-Antalya, Turkey
Duration: 4 Oct 20098 Oct 2009
Conference number: 22
http://photonicssociety.org/newsletters/aug09/22nd_Annual_Meeting.html

Conference

Conference22nd Annual Meeting of IEEE Photonics Society
Number22
Country/TerritoryTurkey
CityBelek-Antalya
Period04/10/200908/10/2009
Internet address

Bibliographical note

Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Fingerprint

Dive into the research topics of 'Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy'. Together they form a unique fingerprint.

Cite this