Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon

T. Frello, E. Veje, Otto Leistiko

    Research output: Contribution to journalJournal articleResearchpeer-review

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    Abstract

    We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. The time evolutions depend on the wavelength and the intensity of the illuminating light. The data indicate the presence of at least two competing mechanisms, one is tentatively related to photoinduced creation of charge carriers in the silicon substrate followed by diffusion into the porous silicon layer, and the other is tentatively related to desorption of hydrogen from the porous silicon. ©1996 American Institute of Physics.
    Original languageEnglish
    JournalJournal of Applied Physics
    Volume79
    Issue number2
    Pages (from-to)1027-1031
    ISSN0021-8979
    DOIs
    Publication statusPublished - 1996

    Bibliographical note

    Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Cite this

    Frello, T. ; Veje, E. ; Leistiko, Otto. / Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon. In: Journal of Applied Physics. 1996 ; Vol. 79, No. 2. pp. 1027-1031.
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    title = "Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon",
    abstract = "We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. The time evolutions depend on the wavelength and the intensity of the illuminating light. The data indicate the presence of at least two competing mechanisms, one is tentatively related to photoinduced creation of charge carriers in the silicon substrate followed by diffusion into the porous silicon layer, and the other is tentatively related to desorption of hydrogen from the porous silicon. {\circledC}1996 American Institute of Physics.",
    author = "T. Frello and E. Veje and Otto Leistiko",
    note = "Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",
    year = "1996",
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    Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon. / Frello, T.; Veje, E.; Leistiko, Otto.

    In: Journal of Applied Physics, Vol. 79, No. 2, 1996, p. 1027-1031.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon

    AU - Frello, T.

    AU - Veje, E.

    AU - Leistiko, Otto

    N1 - Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    PY - 1996

    Y1 - 1996

    N2 - We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. The time evolutions depend on the wavelength and the intensity of the illuminating light. The data indicate the presence of at least two competing mechanisms, one is tentatively related to photoinduced creation of charge carriers in the silicon substrate followed by diffusion into the porous silicon layer, and the other is tentatively related to desorption of hydrogen from the porous silicon. ©1996 American Institute of Physics.

    AB - We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. The time evolutions depend on the wavelength and the intensity of the illuminating light. The data indicate the presence of at least two competing mechanisms, one is tentatively related to photoinduced creation of charge carriers in the silicon substrate followed by diffusion into the porous silicon layer, and the other is tentatively related to desorption of hydrogen from the porous silicon. ©1996 American Institute of Physics.

    U2 - 10.1063/1.360890

    DO - 10.1063/1.360890

    M3 - Journal article

    VL - 79

    SP - 1027

    EP - 1031

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 2

    ER -