Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon

T. Frello; E. Veje; Otto Leistiko

doi:10.1063/1.360890

Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon

T. Frello, E. Veje, Otto Leistiko

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Abstract

We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. The time evolutions depend on the wavelength and the intensity of the illuminating light. The data indicate the presence of at least two competing mechanisms, one is tentatively related to photoinduced creation of charge carriers in the silicon substrate followed by diffusion into the porous silicon layer, and the other is tentatively related to desorption of hydrogen from the porous silicon. ©1996 American Institute of Physics.

Original language	English
Journal	Journal of Applied Physics
Volume	79
Issue number	2
Pages (from-to)	1027-1031
ISSN	0021-8979
DOIs	https://doi.org/10.1063/1.360890
Publication status	Published - 1996

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Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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title = "Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon",

abstract = "We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. The time evolutions depend on the wavelength and the intensity of the illuminating light. The data indicate the presence of at least two competing mechanisms, one is tentatively related to photoinduced creation of charge carriers in the silicon substrate followed by diffusion into the porous silicon layer, and the other is tentatively related to desorption of hydrogen from the porous silicon. {\textcopyright}1996 American Institute of Physics.",

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AU - Veje, E.

AU - Leistiko, Otto

N1 - Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 1996

Y1 - 1996

N2 - We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. The time evolutions depend on the wavelength and the intensity of the illuminating light. The data indicate the presence of at least two competing mechanisms, one is tentatively related to photoinduced creation of charge carriers in the silicon substrate followed by diffusion into the porous silicon layer, and the other is tentatively related to desorption of hydrogen from the porous silicon. ©1996 American Institute of Physics.

AB - We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. The time evolutions depend on the wavelength and the intensity of the illuminating light. The data indicate the presence of at least two competing mechanisms, one is tentatively related to photoinduced creation of charge carriers in the silicon substrate followed by diffusion into the porous silicon layer, and the other is tentatively related to desorption of hydrogen from the porous silicon. ©1996 American Institute of Physics.

U2 - 10.1063/1.360890

DO - 10.1063/1.360890

M3 - Journal article

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EP - 1031

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon

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