Observation of Supercurrent Enhancement in SNS Junctions by Nonequilibrium Injection into Supercurrent Carrying Bound Andreev States

Jonatan Kutchinsky, Rafael Taboryski, Claus B. Sørensen, Jørn Bindslev Hansen, Poul Erik Lindelof

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Abstract

We report for the first time enhancement of the supercurrent by means of injection in a mesoscopic three terminal planar SN-SNS device made of Al on GaAs. When a current is injected from one of the superconducting Al electrodes at an injection bias V = Δ(T)/e, the dc Josephson current between the other two superconducting electrodes has a maximum, giving evidence for an enhancement due to a nonequilibrium injection into bound Andreev states of the underlying semiconductor. The effect persists to temperatures where the equilibrium supercurrent has vanished.
Original languageEnglish
JournalPhysical Review Letters
Volume83
Issue number23
Pages (from-to)4856-4859
ISSN0031-9007
DOIs
Publication statusPublished - 1999

Bibliographical note

Copyright (1999) by the American Physical Society.

Keywords

  • ENERGY-GAP STRUCTURE
  • SUPERCONDUCTING WEAK LINKS
  • REFLECTIONS
  • TRANSISTOR

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