Abstract
We report for the first time enhancement of the supercurrent by means of injection in a mesoscopic three terminal planar SN-SNS device made of Al on GaAs. When a current is injected from one of the superconducting Al electrodes at an injection bias V = Δ(T)/e, the dc Josephson current between the other two superconducting electrodes has a maximum, giving evidence for an enhancement due to a nonequilibrium injection into bound Andreev states of the underlying semiconductor. The effect persists to temperatures where the equilibrium supercurrent has vanished.
Original language | English |
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Journal | Physical Review Letters |
Volume | 83 |
Issue number | 23 |
Pages (from-to) | 4856-4859 |
ISSN | 0031-9007 |
DOIs | |
Publication status | Published - 1999 |
Bibliographical note
Copyright (1999) by the American Physical Society.Keywords
- ENERGY-GAP STRUCTURE
- SUPERCONDUCTING WEAK LINKS
- REFLECTIONS
- TRANSISTOR