Nucleation and growth of polycrystalline SiC

M. Kaiser; S. Schimmel; V. Jokubavicius; M. K. Linnarsson; Haiyan Ou; M. Syväjärvi; P. Wellmann

doi:10.1088/1757-899X/56/1/012001

Nucleation and growth of polycrystalline SiC

M. Kaiser
, S. Schimmel
, V. Jokubavicius
, M. K. Linnarsson
, Haiyan Ou
, M. Syväjärvi
, P. Wellmann

Friedrich-Alexander University Erlangen-Nürnberg
Linköping University
KTH Royal Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar pressure at 2250°C in diffusion limited mass transport regime generating a convex shaped growth form of the solid-gas interface leading to lateral expansion of virtually [001] oriented crystallites. Growth at 2350°C led to the stabilization of 6H polytypic grains. The micropipe density in the bulk strongly depends on the substrate used.

Original language	English
Title of host publication	EMRS 2013 Spring Meeting, Symposium G
Number of pages	7
Publisher	IOP Publishing
Publication date	2014
Article number	012001
DOIs	https://doi.org/10.1088/1757-899X/56/1/012001
Publication status	Published - 2014
Event	E-MRS 2013 Spring Meeting - Strasbourg, France Duration: 27 May 2013 → 31 May 2013 http://www.emrs-strasbourg.com/index.php?option=com_content&task=view&id=569&Itemid=1583

Conference

Conference	E-MRS 2013 Spring Meeting
Country/Territory	France
City	Strasbourg
Period	27/05/2013 → 31/05/2013
Internet address	http://www.emrs-strasbourg.com/index.php?option=com_content&task=view&id=569&Itemid=1583

Series	I O P Conference Series: Materials Science and Engineering
Number	1
Volume	56
ISSN	1757-8981

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1757 899X 56 1 012001Final published version, 0.99 MB

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title = "Nucleation and growth of polycrystalline SiC",

abstract = "The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar pressure at 2250°C in diffusion limited mass transport regime generating a convex shaped growth form of the solid-gas interface leading to lateral expansion of virtually [001] oriented crystallites. Growth at 2350°C led to the stabilization of 6H polytypic grains. The micropipe density in the bulk strongly depends on the substrate used.",

author = "M. Kaiser and S. Schimmel and V. Jokubavicius and Linnarsson, \{M. K.\} and Haiyan Ou and M. Syv{\"a}j{\"a}rvi and P. Wellmann",

note = "Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.; E-MRS 2013 Spring Meeting ; Conference date: 27-05-2013 Through 31-05-2013",

year = "2014",

doi = "10.1088/1757-899X/56/1/012001",

language = "English",

series = "I O P Conference Series: Materials Science and Engineering",

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Kaiser, M, Schimmel, S, Jokubavicius, V, Linnarsson, MK, Ou, H, Syväjärvi, M & Wellmann, P 2014, Nucleation and growth of polycrystalline SiC. in EMRS 2013 Spring Meeting, Symposium G., 012001, IOP Publishing, I O P Conference Series: Materials Science and Engineering, no. 1, vol. 56, E-MRS 2013 Spring Meeting, Strasbourg, France, 27/05/2013. https://doi.org/10.1088/1757-899X/56/1/012001

TY - GEN

T1 - Nucleation and growth of polycrystalline SiC

AU - Kaiser, M.

AU - Schimmel, S.

AU - Jokubavicius, V.

AU - Linnarsson, M. K.

AU - Ou, Haiyan

AU - Syväjärvi, M.

AU - Wellmann, P.

N1 - Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

PY - 2014

Y1 - 2014

N2 - The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar pressure at 2250°C in diffusion limited mass transport regime generating a convex shaped growth form of the solid-gas interface leading to lateral expansion of virtually [001] oriented crystallites. Growth at 2350°C led to the stabilization of 6H polytypic grains. The micropipe density in the bulk strongly depends on the substrate used.

AB - The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar pressure at 2250°C in diffusion limited mass transport regime generating a convex shaped growth form of the solid-gas interface leading to lateral expansion of virtually [001] oriented crystallites. Growth at 2350°C led to the stabilization of 6H polytypic grains. The micropipe density in the bulk strongly depends on the substrate used.

U2 - 10.1088/1757-899X/56/1/012001

DO - 10.1088/1757-899X/56/1/012001

M3 - Article in proceedings

T3 - I O P Conference Series: Materials Science and Engineering

BT - EMRS 2013 Spring Meeting, Symposium G

PB - IOP Publishing

T2 - E-MRS 2013 Spring Meeting

Y2 - 27 May 2013 through 31 May 2013

ER -

Nucleation and growth of polycrystalline SiC

Abstract

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