Nucleation and growth of chemical beam epitaxy gallium nitride thin films

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@article{9550f860ceb64dd9bb352323c168326b,

title = "Nucleation and growth of chemical beam epitaxy gallium nitride thin films",

author = "Esther Kim and I. Berishev and A. Bensaoula and Seunghwan Lee and Perry, \{S. S.\} and K. Waters and A. Schultz",

year = "1997",

language = "English",

volume = "71",

pages = "3072--3074",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Nucleation and growth of chemical beam epitaxy gallium nitride thin films

AU - Kim, Esther

AU - Berishev, I.

AU - Bensaoula, A.

AU - Lee, Seunghwan

AU - Perry, S. S.

AU - Waters, K.

AU - Schultz, A.

PY - 1997

Y1 - 1997

M3 - Journal article

SN - 0003-6951

VL - 71

SP - 3072

EP - 3074

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -