Novel light trapping scheme for thin crystalline cells utilizing deep structures on both wafer sides [solar cells].

Anders Michael Jørgensen; Thomas Clausen; Otto Leistiko

doi:10.1109/PVSC.1997.654079

Novel light trapping scheme for thin crystalline cells utilizing deep structures on both wafer sides [solar cells].

Anders Michael Jørgensen, Thomas Clausen, Otto Leistiko

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

A new light trapping structure is presented with trapping capabilities comparable to or better than those of the perpendicular grooves structure. The new structure traps a larger fraction of rays for 8-80 passes than the perpendicular grooves structure. The average path length enhancement is about 62 times the average thickness. The structure consists of deep (-200 μm) inverted pyramids on the front side and deep (-200 μm) truncated pyramids with eight sides on the back. The structure is realized in crystalline silicon by wet chemical etching using potassium hydroxide (KOH) and isopropanol (IPA). A process for creating thin solar cells with this light trapping scheme is described. The process includes only two main photolithographic steps and features a self-aligned front metallization. The process uses 250 μm wafers to create cells that on average are about 70 μm thick

Original language	English
Title of host publication	Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Publisher	IEEE
Publication date	1998
Pages	263-266
ISBN (Print)	0-7803-3767-0
DOIs	https://doi.org/10.1109/PVSC.1997.654079
Publication status	Published - 1998
Event	Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference. - Duration: 1 Jan 1997 → …

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Conference	Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference.
Period	01/01/1997 → …

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Copyright: 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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@inproceedings{d283bc0d27014c7fb1a193f7eaa91694,

title = "Novel light trapping scheme for thin crystalline cells utilizing deep structures on both wafer sides [solar cells].",

abstract = "A new light trapping structure is presented with trapping capabilities comparable to or better than those of the perpendicular grooves structure. The new structure traps a larger fraction of rays for 8-80 passes than the perpendicular grooves structure. The average path length enhancement is about 62 times the average thickness. The structure consists of deep (-200 μm) inverted pyramids on the front side and deep (-200 μm) truncated pyramids with eight sides on the back. The structure is realized in crystalline silicon by wet chemical etching using potassium hydroxide (KOH) and isopropanol (IPA). A process for creating thin solar cells with this light trapping scheme is described. The process includes only two main photolithographic steps and features a self-aligned front metallization. The process uses 250 μm wafers to create cells that on average are about 70 μm thick",

author = "J{\o}rgensen, {Anders Michael} and Thomas Clausen and Otto Leistiko",

note = "Copyright: 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference. ; Conference date: 01-01-1997",

year = "1998",

doi = "10.1109/PVSC.1997.654079",

language = "English",

isbn = "0-7803-3767-0",

pages = "263--266",

booktitle = "Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE",

publisher = "IEEE",

address = "United States",

}

Jørgensen, AM , Clausen, T & Leistiko, O 1998, Novel light trapping scheme for thin crystalline cells utilizing deep structures on both wafer sides [solar cells]. in Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE. IEEE, pp. 263-266, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference., 01/01/1997. https://doi.org/10.1109/PVSC.1997.654079

Novel light trapping scheme for thin crystalline cells utilizing deep structures on both wafer sides [solar cells]. / Jørgensen, Anders Michael ; Clausen, Thomas; Leistiko, Otto.
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE. IEEE, 1998. p. 263-266.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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AU - Jørgensen, Anders Michael

AU - Clausen, Thomas

AU - Leistiko, Otto

N1 - Copyright: 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 1998

Y1 - 1998

N2 - A new light trapping structure is presented with trapping capabilities comparable to or better than those of the perpendicular grooves structure. The new structure traps a larger fraction of rays for 8-80 passes than the perpendicular grooves structure. The average path length enhancement is about 62 times the average thickness. The structure consists of deep (-200 μm) inverted pyramids on the front side and deep (-200 μm) truncated pyramids with eight sides on the back. The structure is realized in crystalline silicon by wet chemical etching using potassium hydroxide (KOH) and isopropanol (IPA). A process for creating thin solar cells with this light trapping scheme is described. The process includes only two main photolithographic steps and features a self-aligned front metallization. The process uses 250 μm wafers to create cells that on average are about 70 μm thick

AB - A new light trapping structure is presented with trapping capabilities comparable to or better than those of the perpendicular grooves structure. The new structure traps a larger fraction of rays for 8-80 passes than the perpendicular grooves structure. The average path length enhancement is about 62 times the average thickness. The structure consists of deep (-200 μm) inverted pyramids on the front side and deep (-200 μm) truncated pyramids with eight sides on the back. The structure is realized in crystalline silicon by wet chemical etching using potassium hydroxide (KOH) and isopropanol (IPA). A process for creating thin solar cells with this light trapping scheme is described. The process includes only two main photolithographic steps and features a self-aligned front metallization. The process uses 250 μm wafers to create cells that on average are about 70 μm thick

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BT - Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

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Novel light trapping scheme for thin crystalline cells utilizing deep structures on both wafer sides [solar cells].

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