Novel electro-optical phase modulator based on GaInAs/InP modulation-doped quantum-well structures

C. Thirstrup

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    A novel electro-optical phase modulator working at 1.55 µm is analyzed and proposed. It is shown by a numerical model that in a GaInAs/InP pn-nin-pn multiple-quantum-well waveguide structure, large optical phase modulation can be obtained at small intensity modulation and with improved performance compared to what is achieved in quantum confined Stark effect modulators of the same material system. The device proposed is based on a modulation of the quasi-Fermi energies of the electrons in the GaInAs quantum wells. This operational principle allows GHz modulation frequencies. Applied Physics Letters is copyrighted by The American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Issue number22
    Pages (from-to)2641-2643
    Publication statusPublished - 1992

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    Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics




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