This paper presents a novel clocking scheme for the Favrat charge pump topology. The proposed clock scheme achieves an 8 % higher maximum power output and a 12 % higher maximum output voltage than the prior-art clock scheme. The novel clock scheme is part of the development of a very high voltage charge pump for MEMS applications. In this work a 46-stage charge pump based on the Favrat charge pump topology has been fabricated in a 180-nm SOI process with a > 200 V breakdown voltage. With an input voltage of 5 V the fabricated charge pump reach an output voltage of 185 V when driven by the proposed clock scheme and loaded with a 2 nA load, the prior-art clock scheme can only reach an output voltage of 165 V with a 2 nA load.
|Title of host publication||Proceedings of 2019 IEEE Nordic Circuits and Systems Conference|
|Number of pages||7|
|Publication status||Published - 2019|
|Event||2019 IEEE Nordic Circuits and Systems Conference - Helsinki, Finland|
Duration: 29 Oct 2019 → 30 Oct 2019
|Conference||2019 IEEE Nordic Circuits and Systems Conference|
|Period||29/10/2019 → 30/10/2019|