Novel Clocking Scheme with Improved Voltage Gain for a Two-Phase Charge Pump Topology

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

94 Downloads (Pure)

Abstract

This paper presents a novel clocking scheme for the Favrat charge pump topology. The proposed clock scheme achieves an 8 % higher maximum power output and a 12 % higher maximum output voltage than the prior-art clock scheme. The novel clock scheme is part of the development of a very high voltage charge pump for MEMS applications. In this work a 46-stage charge pump based on the Favrat charge pump topology has been fabricated in a 180-nm SOI process with a > 200 V breakdown voltage. With an input voltage of 5 V the fabricated charge pump reach an output voltage of 185 V when driven by the proposed clock scheme and loaded with a 2 nA load, the prior-art clock scheme can only reach an output voltage of 165 V with a 2 nA load.
Original languageEnglish
Title of host publicationProceedings of 2019 IEEE Nordic Circuits and Systems Conference
Number of pages7
PublisherIEEE
Publication date2019
Article number8906942
ISBN (Print)9781728127699
DOIs
Publication statusPublished - 2019
Event2019 IEEE Nordic Circuits and Systems Conference - Helsinki, Finland
Duration: 29 Oct 201930 Oct 2019
https://events.tuni.fi/norcas2019/

Conference

Conference2019 IEEE Nordic Circuits and Systems Conference
CountryFinland
CityHelsinki
Period29/10/201930/10/2019
Internet address

Fingerprint Dive into the research topics of 'Novel Clocking Scheme with Improved Voltage Gain for a Two-Phase Charge Pump Topology'. Together they form a unique fingerprint.

Cite this