Note: Anodic bonding with cooling of heat-sensitive areas

Peter Christian Kjærgaard Vesborg, Jakob Lind Olsen, Toke Riishøj Henriksen, Ib Chorkendorff, Ole Hansen

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Abstract

Anodic bonding of silicon to glass always involves heating the glass and device to high temperatures so that cations become mobile in the electric field. We present a simple way of bonding thin silicon samples to borosilicate glass by means of heating from the glass side while locally cooling heat-sensitive areas from the silicon side. Despite the high thermal conductivity of silicon, this method allows a strong anodic bond to form just millimeters away from areas essentially at room temperature.
Original languageEnglish
JournalReview of Scientific Instruments
Volume81
Issue number1
Pages (from-to)016111
ISSN0034-6748
DOIs
Publication statusPublished - 2010

Bibliographical note

Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

  • thermal conductivity
  • elemental semiconductors
  • borosilicate glasses
  • cooling
  • heating
  • bonds (chemical)
  • silicon

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