Abstract
Anodic bonding of silicon to glass always involves heating the glass and device to high temperatures so that cations become mobile in the electric field. We present a simple way of bonding thin silicon samples to borosilicate glass by means of heating from the glass side while locally cooling heat-sensitive areas from the silicon side. Despite the high thermal conductivity of silicon, this method allows a strong anodic bond to form just millimeters away from areas essentially at room temperature.
Original language | English |
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Journal | Review of Scientific Instruments |
Volume | 81 |
Issue number | 1 |
Pages (from-to) | 016111 |
ISSN | 0034-6748 |
DOIs | |
Publication status | Published - 2010 |
Bibliographical note
Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Keywords
- thermal conductivity
- elemental semiconductors
- borosilicate glasses
- cooling
- heating
- bonds (chemical)
- silicon