Nonplanar nanoselective area growth of InGaAs/InP

Nadezda Kuznetsova, Pierre Colman, Elizaveta Semenova, Shima Kadkhodazadeh, N. V. Kryzhanovskaya, Sara Ek, Weiqi Xue, Martin Schubert, A. E. Zhukov, Kresten Yvind

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

In this study, we have investigated metal-organic vapor phase epitaxial nano-patterned selective area growth of InGaAs/InP on non-planar (001) InP surfaces. Due to high etching resistance and the small molecular size of negative tone electron beam HSQ resist, the protection mask formed in HSQ has small feature sizes in ten nanometers scale and allow realization of in-situ etching. As was observed in the SAG regime, in-situ etching of InP by carbon tetrabromide leads to formation of self-limited structures. By altering etching time, the groove shape can be changed from a triangular trench to a trapeze. Another appealing aspect of in situ etching is that the shape of InGaAs can be tuned from a crescent to a triangular or a line by varying growth parameters. Quantum well wires can be fabricated by growing directly in the bottom of V-shaped groove. In addition, changes of mask orientations lead to anistropic or isotropic character of etching. The investigated technique of nano-patterned selective area growth allows obtaining different profiles of structures and different quantum structures such as quantum well or wires in the same growth run. To investigate the shape and crystalline quality of the active material, the cross-sectional geometry was observed by field emission scanning electron microscopy and scanning transmission electron microscopy. The optical properties were carried out at room temperature using micro-photoluminescence setup. The results showed different deposition rates for openings oriented along [0-11] and [0-1-1] directions with higher rate along [0-1-1]. The fabricated active material was incorporated into photonic crystal waveguides.
Original languageEnglish
Article number899608
JournalProceedings of SPIE, the International Society for Optical Engineering
Volume8996
Number of pages7
ISSN0277-786X
DOIs
Publication statusPublished - 2014
EventSPIE Photonics West : Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI - San Francisco, California, United States
Duration: 1 Feb 20146 Feb 2014

Conference

ConferenceSPIE Photonics West : Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI
CountryUnited States
CitySan Francisco, California
Period01/02/201406/02/2014

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