Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

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Abstract

State-of-the-art power converter topologies such as resonant converters are either designed with or affected by the parasitic capacitances of the power switches. However, the power switches are conventionally characterized in terms of switching time and/or gate charge with little insight into the nonlinearities of the parasitic capacitances. This paper proposes a modelling method that can be utilized to systematically analyse the nonlinear parasitic capacitances. The existing ways of characterizing the off-state capacitance can be extended by the proposed circuit model that covers all the related states: off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize the nonlinearities of the parasitic capacitances. The equivalent circuits in different states and the evaluation equations are provided.
Original languageEnglish
JournalElektronika ir Elektrotechnika
Volume22
Issue number3
Pages (from-to)37-43
ISSN1392-1215
DOIs
Publication statusPublished - 2016

Keywords

  • Nonlinear circuits
  • Parasitic capacitance
  • Power MOSFET
  • Silicon-on-insulator

Cite this

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title = "Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process",
abstract = "State-of-the-art power converter topologies such as resonant converters are either designed with or affected by the parasitic capacitances of the power switches. However, the power switches are conventionally characterized in terms of switching time and/or gate charge with little insight into the nonlinearities of the parasitic capacitances. This paper proposes a modelling method that can be utilized to systematically analyse the nonlinear parasitic capacitances. The existing ways of characterizing the off-state capacitance can be extended by the proposed circuit model that covers all the related states: off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize the nonlinearities of the parasitic capacitances. The equivalent circuits in different states and the evaluation equations are provided.",
keywords = "Nonlinear circuits, Parasitic capacitance, Power MOSFET, Silicon-on-insulator",
author = "Lin Fan and Arnold Knott and J{\o}rgensen, {Ivan Harald Holger}",
year = "2016",
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pages = "37--43",
journal = "Elektronika ir Elektrotechnika",
issn = "1392-1215",
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}

Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process. / Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger.

In: Elektronika ir Elektrotechnika, Vol. 22, No. 3, 2016, p. 37-43.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

AU - Fan, Lin

AU - Knott, Arnold

AU - Jørgensen, Ivan Harald Holger

PY - 2016

Y1 - 2016

N2 - State-of-the-art power converter topologies such as resonant converters are either designed with or affected by the parasitic capacitances of the power switches. However, the power switches are conventionally characterized in terms of switching time and/or gate charge with little insight into the nonlinearities of the parasitic capacitances. This paper proposes a modelling method that can be utilized to systematically analyse the nonlinear parasitic capacitances. The existing ways of characterizing the off-state capacitance can be extended by the proposed circuit model that covers all the related states: off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize the nonlinearities of the parasitic capacitances. The equivalent circuits in different states and the evaluation equations are provided.

AB - State-of-the-art power converter topologies such as resonant converters are either designed with or affected by the parasitic capacitances of the power switches. However, the power switches are conventionally characterized in terms of switching time and/or gate charge with little insight into the nonlinearities of the parasitic capacitances. This paper proposes a modelling method that can be utilized to systematically analyse the nonlinear parasitic capacitances. The existing ways of characterizing the off-state capacitance can be extended by the proposed circuit model that covers all the related states: off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize the nonlinearities of the parasitic capacitances. The equivalent circuits in different states and the evaluation equations are provided.

KW - Nonlinear circuits

KW - Parasitic capacitance

KW - Power MOSFET

KW - Silicon-on-insulator

U2 - 10.5755/j01.eie.22.3.15312

DO - 10.5755/j01.eie.22.3.15312

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JO - Elektronika ir Elektrotechnika

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