Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

Lin Fan, Arnold Knott, Ivan Harald Holger Jørgensen

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    214 Downloads (Pure)

    Abstract

    State-of-the-art power converter topologies such as resonant converters are either designed with or affected by the parasitic capacitances of the power switches. However, the power switches are conventionally characterized in terms of switching time and/or gate charge with little insight into the nonlinearities of the parasitic capacitances. This paper proposes a modeling method that can be utilized to systematically analyze the nonlinear parasitic capacitances. The existing ways of characterizing the off-state capacitance can be extended by the proposed circuit model that covers all the related states: off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize the nonlinearities of the parasitic capacitances. The equivalent circuits in different states and the evaluation equations are provided.
    Original languageEnglish
    Title of host publication20th International Conference ELECTRONICS 2016
    Number of pages7
    Publication date2016
    Publication statusPublished - 2016
    Event20th International Conference ELECTRONICS - Palanga, Lithuania
    Duration: 13 Jun 201615 Jun 2016
    Conference number: 20

    Conference

    Conference20th International Conference ELECTRONICS
    Number20
    Country/TerritoryLithuania
    CityPalanga
    Period13/06/201615/06/2016

    Keywords

    • Nonlinear circuits
    • Parasitic capacitance
    • Power MOSFET
    • Silicon-on-insulator

    Fingerprint

    Dive into the research topics of 'Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process'. Together they form a unique fingerprint.

    Cite this