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Abstract
This thesis focuses on the development and improvement of nonlinear integrated photonics platforms for use in high-capacity telecommunications.
The first part is about gallium nitride-on-sapphire integrated devices. The development of the platform and fabrication of the devices is described in detail and the results of both linear and nonlinear characterization is shown. Record-high (platform-specific) quality factors are demonstrated for the microring resonators as well as record high effective nonlinearity (again platform-specific) for the waveguides. The intrinsic material nonlinearity at telecom wavelengths is also extracted.
The second part concerns the aluminum gallium arsenide-on-insulator platform. A couple of specific attempts of improving the platform are described including atomic force microscopy of the sidewalls and surface passivation and the results of these efforts are presented.
Record-high data rate wavelength conversion (40 Gbit/s) using an integrated aluminum gallium arsenide-on-insulator microring resonator is also shown. The low power limit for successful conversion of a 10 Gbit/s signal is also tested.
Finally, the result of broadening of an electro-optic modulated comb in an aluminum gallium arsenide-on-insulator waveguide is shown.
The first part is about gallium nitride-on-sapphire integrated devices. The development of the platform and fabrication of the devices is described in detail and the results of both linear and nonlinear characterization is shown. Record-high (platform-specific) quality factors are demonstrated for the microring resonators as well as record high effective nonlinearity (again platform-specific) for the waveguides. The intrinsic material nonlinearity at telecom wavelengths is also extracted.
The second part concerns the aluminum gallium arsenide-on-insulator platform. A couple of specific attempts of improving the platform are described including atomic force microscopy of the sidewalls and surface passivation and the results of these efforts are presented.
Record-high data rate wavelength conversion (40 Gbit/s) using an integrated aluminum gallium arsenide-on-insulator microring resonator is also shown. The low power limit for successful conversion of a 10 Gbit/s signal is also tested.
Finally, the result of broadening of an electro-optic modulated comb in an aluminum gallium arsenide-on-insulator waveguide is shown.
Original language | English |
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Publisher | Technical University of Denmark |
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Publication status | Published - 2019 |
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Nonlinear integrated photonics
Stassen, E. (PhD Student), Yvind, K. (Main Supervisor), Galili, M. (Supervisor), Pu, M. (Supervisor), Kuyken, B. (Examiner), Sciancalepore, C. (Examiner) & Lægsgaard, J. (Examiner)
01/02/2016 → 12/06/2019
Project: PhD