Nonlinear gain suppression in semiconductor lasers due to carrier heating

Morten Willatzen, A. Uskov, J. Mørk, H. Olesen, B. Tromborg, A.-P. Jauho

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We present a simple model for carrier heating in semiconductor lasers from which the temperature dynamics of the electron and hole distributions can be calculated. Analytical expressions for two new contributions to the nonlinear gain coefficient epsilon are derived, which reflect carrier heating due to stimulated emission and free carrier absorption. In typical cases, carrier heating and spectral holeburning are found to give comparable contributions to nonlinear gain suppression. The results are in good agreement with recent measurements on InGaAsP laser diodes.
Original languageEnglish
JournalI E E E Photonics Technology Letters
Volume3
Issue number7
Pages (from-to)606-609
ISSN1041-1135
DOIs
Publication statusPublished - 1991
Externally publishedYes

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