Nonlinear electrical properties of Si three-terminal junction devices

Meng Fantao , Sun Jie, Mariusz Graczyk, Kailiang Zhang, Mika Prunnila, Jouni Ahopelto, Peixiong Shi, Jinkui Chu, Ivan Maximov, Hong Xu

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume97
    Issue number24
    Pages (from-to)242106
    ISSN0003-6951
    Publication statusPublished - 2010

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