Non-contact mobility measurements of graphene on silicon carbide

Research output: Contribution to journalJournal article – Annual report year: 2019Researchpeer-review

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Non-invasive measurement techniques are of utmost importance for characterization of atomically thin materials to speed up the measurement process while avoiding mechanical damage or contamination of the fragile materials. Terahertz time-domain spectroscopy (THz-TDS) provides non-contact measurement of the frequency dependent conductivity of thin films. Here, we expand the applicability of THz-TDS by spatially mapping the carrier density and mobility of epitaxial graphene grown on silicon carbide. The extracted values are compared to Hall measurements and agrees well for homogeneously conducting samples.
Original languageEnglish
JournalMicroelectronic Engineering
Volume212
Pages (from-to)9-12
ISSN0167-9317
DOIs
Publication statusPublished - 2019
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Epitaxial graphene, Metrology, Terahertz time-domain spectroscopy, Mobility, Hall measurement, 2D materials

ID: 176657925